XT011 is X-FAB’s next generation BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and those of a state-of-the-art 110 nm process. XT011 features high voltage options and range of automotive grade-0 non-volatile memory options. It offers twice the standard cell library density compared to XT018.

XT011 primarily targets next-generation automotive applications that require an increased level of data processing capabilities. In addition, it provides a path to a smaller geometry for industrial and medical products.

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0.6 µm modular BCD-on-SOI technology platform

XT06 is X-FAB’s mature 0.6 µm modular high-voltage BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and a cost effective 0.6 µm process. XT06 features high-voltage primitive devices from 8 V to 60 V as well as a range of non-volatile memory options with operating temperature range of -40 to 125 °C. 
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

Key features:

• Modular 0.6 µm 5 V single poly core process
• Up to 3 metal layers with thick power metal option
• 8 V, 12 V, 30 V and 60 V HV transistors with 18 V gate oxide
• 8 V and 30 V depletion devices
• Vertical PNP and NPN BJTs
• Protection, rectifier and Schottky diodes
• 60 V resistors and capacitors
• EasyFuse and EEPROM NVM IP options
• Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others

1 µm 90 V 225 ˚C SOI technology platform

XI10 is a robust dielectric trench insulated 90 V technology solution supporting up to 225 ˚C junction temperature. The 13 layers 90 V core process module provides trench insulation, single level poly and 3 level of metal. 
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, digital and memory IPs.

Key features:

• 1 µm single poly 3 metal core process
• 5 V CMOS transistors 
• 40 V, 60 V and 90 V NMOS and 30 V and 40 V PMOS transistors 
• High temperature Tungsten metalization option 
• Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others

1 µm modular 625 V BCD-on-SOI technology platform

XDH10 is a robust dielectric trench insulated Ultra High Voltage (UHV) technology solution. The modular process provides a wide variety of passive, MOS and bipolar devices with dielectric bi-directional high voltage trench insulation. The 14 layers 625 V core process module provides trench insulation, single level poly with thick gate oxide and a third level metal with power metal. 
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

Key features:

• Modular 1 µm single poly 3 metal core process
• 5 V and 7 V CMOS transistors 
• 15 V, 20 V and 32 V NMOS and 20 V PMOS transistors 
• Scalable UHV NDMOS & PMOS transistors 
• 600 V IGBT
• High performance NPN and PNP transistors with up to 600 VCE 
• 7 V and UHV depletion transistors 
• Schottky and Zener diodes 
• 650 V capacitor and resistor
• Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others

1 µm modular 340 V BCD-on-SOI technology platform

XDM10 is a robust dielectric trench insulated Ultra High Voltage (UHV) technology solution. The modular process provides a wide variety of passive, MOS and bipolar devices with dielectric bi-directional high voltage trench insulation. The 14 layers 340 V core process module provides trench insulation, single level poly with thick gate oxide and a third level metal with power metal. 
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

Key features:

• Modular 1 µm single poly 3 metal core process
• 5 V and 7 V CMOS transistors 
• 15 V, 20 V and 32 V NMOS and 20 V PMOS transistors 
• Scalable UHV NDMOS & PMOS transistors 
• 340 V IGBT
• High performance NPN and PNP transistors with up to 330 VCE  
• 7 V and UHV depletion transistors 
• Schottky and Zener diodes 
• 350 V capacitor and resistor
• Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others