0.18 µm CMOS APD/SPAD with integrated breakdown voltage monitoring
Published: Mar 2021
Is it worth to talk about the device characterization of breakdown voltage?
It should be a simple number extracted from a IV -curve
CMOS foundry point of view but there is more behind them
Most important parameter to monitor the CMOS process
Shift in the breakdown voltage refer to issues in the process
Therefore, the methodology how to extract the breakdown voltage or even the IV-curve is essential
By choosing the “AVLA” process module in XH018
Enable the primitive device of avalanche photodiode and single photon avalanche diode
Necessity to monitor the process for both devices