We build the bridge between the digital and analog worlds.

Our Technology Portfolio

As a pure-play foundry specialized in analog/mixed-signal applications, we offer a wide range of modular CMOS and SOI processes in geometries ranging from 1.0 µm to 130 nm as well as special MEMS and SiC process capabilities.

13 process families with over 450 options

MEMS with or without integrated CMOS

First 6-inch foundry offering worldwide

3D Integration and Wafer Level Package Solutions

CMOS & SOI overview

Overview of X-FAB's CMOS and SOI process options ranging from 130 nm to 1.0 µm.

X-FAB's CMOS process offering

Unlike most conventional semiconductor foundries, X-FAB does not simply stick to the ITRS Roadmap, trying to develop ever-smaller and faster CMOS process technologies.

The ITRS Roadmap is our guideline - our central aim, however, is to enhance and expand the CMOS technologies it recommends with additional, special analog functions and modular options.

X-FAB thus creates a broad range of new mixed-signal process families for applications in various areas, from the automotive and medical sector to industrial applications, communication products, or consumer electronics.

Our state-of-the-art CMOS and SOI platforms can be complemented with specialties ranging from analog/mixed-signal functions to high-voltage options, embedded non-volatile memories, optical, RF and bipolar elements, or the implementation of microelectromechanical sensor technologies.

180 nm CMOS process family

  • Automotive 180 nm sensor and high-voltage technology platform

    XH018 is a powerful modular 180 nm sensor and high-voltage EPI technology. It combines the benefit of a 180 nm modular 1.8 V / 3.3 V ultra low noise process supporting an extended temperature range of -40 to 175 °C with an extensive portfolio of high voltage and analog devices as well as a range of automotive grade non-volatile-memory options. In addition, multiple fully characterized photodiode and APD/SPAD options are available. The XH018 platform is designed for smart sensor, sensor interface and actuator applications.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Fully modular 180 nm EPI process based on 1.8 V / 3.3 V dual gate core module
    • Up to six metal layers with different thick metal options
    • Up to 175 ºC operating temperature supporting AEC-Q100 grade 0
    • Unique integration of digital, analog, HV and NVM in a single process 
    • High-reliability automotive NVM solutions including NVRAM and eFlash
    • Optional ultra low noise 1.8 V and 3.3 V CMOS
    • Fully characterized photodiodes and APD/SPAD 
    • 10 V – 45 V HV CMOS transistors with 18 V gate oxide
    • High gain  BJTs
    • HV Schottky diodes 
    • Standard and high capacitance single, double, triple MIM and metal fringe capacitors
    • Multiple 1.8 V and 3.3 V libraries available to enable complex designs
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
  • Automotive 180 nm high-voltage and analog/mixed-signal technology platform

    XP018 is a modular 180 mn high-voltage EPI technology. It combines the benefit of a 180 nm 5 V based process supporting an extended temperature range of -40 to 175 °C with an extensive portfolio of high voltage and analog devices as well as a range of automotive grade non-volatile-Memory options. The XP018 platform is specifically designed for cost sensitive and robust automotive, industrial and medical applications.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs. 

    Key features:

    • Fully modular 180 nm EPI process based on low mask count 5 V single gate core module
    • Up to six metal layers with different thick metal options
    • Up to 175 ºC operating temperature supporting AEC-Q100 grade 0
    • Unique integration of digital, analog, HV and NVM in a single process 
    • High-reliability automotive NVM solutions including EEPROM
    • 12 V – 60 V HV CMOS transistors
    • High gain BJTs
    • Schottky and Zener diodes 
    • Standard and High capacitance single, double, triple MIM and Metal Fringe capacitors
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
       
  • 180 nm image sensor technology platform

    XS018 is X-FAB’s specialized process for fast image sensors. The optional available modules for 4-transistor cells, pinned photo diodes and the stitching capabilities make this technology ideal for large image sensor applications needing high frame rates as used for instance for medical and scientific X-ray cameras. Large die-sizes are supported by 1D or 2D stitching. The 3.3 V core module allows a low mask count designs. 
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Fully modular 180 nm EPI process based on low mask count 3.3 V Single Gate core module
    • 3.3 V / 1.8 V core process options
    • Up to six metal layers with different thick metal options
    • Thin top metal option
    • Standard and low power modules
    • Pinned photodiode module with choice of 4 different pinning voltages
    • 4T pixel Module
    • Low-noise buried channel NMOS
    • Low threshold voltage NMOS with choice of 5 different threshold voltages
    • Pixel reference designs from 3.6 to 200 µm 
    • High value poly resistors
    • Standard and High capacitance single, double, triple MIM and Metal Fringe capacitors
    • Support of 1D and 2D stitching
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
  • Automotive 180 nm BCD-on-SOI technology platform

    XT018 is X-FAB’s premier 180 nm modular high-voltage BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and those of a state-of-the-art six metal layers 180 nm process. XT018 features a complete portfolio of voltage options from 10 V to 200 V as well as a full range of automotive Grade-0 qualified Non-Volatile-Memory options. 
    The XT018 platform is specifically designed for a next generation automotive, industrial and medical applications operating in the temperature range of -40 to 175 °C.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modeling, comprehensive set of analog, digital, and memory IPs.

    Key features:

    • Fully modular 180 nm SOI process based on low mask count 5 V Single Gate core module
    • Up to six metal layers with different thick metal and CuRDL options
    • Deep Trench Isolation and Handle Wafer Contact
    • Up to 175 ºC operating temperature supporting AEC-Q100 Grade 0
    • Unique integration of digital, analog, HV, NVM and SOI in a single process 
    • High-reliability automotive NVM solutions including Flash
    • 10 V – 200 V HV CMOS transistors
    • Excellent specific Ron HV N-channel device performance 
    • High gain BJTs
    • Very fast forward HV, Schottky and Zener diodes
    • Standard and High capacitance single, double, triple MIM and Metal Fringe capacitors
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner
    • Silicon Frontline R3D support for metal optimization 
  • Industry standard 180 nm mixed-signal / RF technology platform

    XC018 is a modular 180 nm mixed-signal / RF technology platform based on 1.8 V / 3.3V or 1.8 V / 5 V dual gate core processes. Main target applications are semi-custom and full custom designs for automotive, consumer, industrial as well as communication products.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Modular 180 nm bulk process
    • 1.8 V / 3.3 V or 1.8 V / 5 V core process options
    • Up to six metal layers with different thick metal options
    • Thick top metal option for inductors
    • Standard and low power modules
    • RF characterization and models for all voltage classes
    • Standard and high capacitance single, double, triple MIM and metal fringe capacitors
    • High value poly resistors
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner  

350 nm CMOS process family

With our 350 nm process family you can design chips for a wide range of applications. All four processes come with best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling as well as comprehensive analog, digital, and memory IPs.

 

  • Comprehensive 350 nm sensor and high-voltage technology platform

    XH035 is a comprehensive modular 350 nm sensor and high-voltage EPI technology. It combines the benefit of a 350 nm modular 3.3 V ultra low noise process with an extensive portfolio of high voltage and analog devices. The XH035 platform is designed for robust sensor and sensor interface applications.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Fully modular 350 nm EPI process based on 3.3 V ultra low noise core module
    • Alternative 5 V core module or 3.3 V / 5 V dual gate
    • Best-in-class ultra low noise 3.3 V PMOS
    • Up to four metal layers with thick metal options
    • Up to 125 ºC operating temperature supporting AEC-Q100 grade 1
    • Unique integration of digital, analog, HV and NVM in a single process 
    • High-reliability automotive NVM solutions including EEPROM
    • Optical window etching and Anti Reflecting Coating for high sensitive photodiodes
    • 10 V – 100 V HV CMOS transistors with 3.3 V, 5 V or 18 V Gate Oxide
    • High gain  BJTs
    • HV Schottky diodes 
    • Standard single, double MIM, Poly and metal fringe capacitors
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
  • Comprehensive 350 nm automotive sensor and high-voltage technology platform

    XA035 is a comprehensive modular 350 nm sensor and high-voltage EPI technology. It combines the benefit of a 350 nm modular 3.3 V ultra low noise process supporting an extended temperature range of -40 to 175 °C with an extensive portfolio of high voltage and analog devices. The XA035 platform is designed for robust automotive sensor, sensor interface and actuator applications.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Fully modular 350 nm EPI process based on 3.3 V ultra low noise core module
    • Optional 3.3 V / 5 V dual gate
    • Best-in-class ultra low noise 3.3 V PMOS
    • Up to four metal layers with thick metal options
    • Up to 175 ºC operating temperature supporting AEC-Q100 grade 0 
    • Unique integration of digital, analog, HV and NVM in a single process 
    • High-reliability automotive NVM solutions including EEPROM
    • Optical window etching and Anti Reflecting Coating for high sensitive photodiodes
    • 10 V – 100 V HV CMOS transistors with 3.3 V, 5 V or 18 V Gate Oxide
    • High gain  BJTs
    • HV Schottky diodes 
    • Standard single, double MIM, Poly and Metal Fringe capacitors
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
       
  • 350 nm modular sensor technology platform

    XO035 is X-FAB’s specialized process for high-speed optoelectronics. It is especially suited for applications needing high-sensitive high- bandwidth photo diodes arrays for such as optical data storage, optical data communication or high dynamic range sensors. Special opto-process modules allow an optimised PIN cathode implantation, optical window etching and dedicated ARC layer deposition.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Fully modular 350 nm EPI process based on 3.3V core module
    • Alternative 5V module
    • Up to four metal layers with different thick metal options
    • High-sensitive PIN photodiodes 
    • Optical window etching and Anti Reflecting Coating optimized for different wavelengths 
    • High gain  BJTs
    • Standard single, double MIM, Poly and metal fringe capacitors
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner  
       
  • 350 nm 700 V ultra-high-voltage technology platform

    XU035 is a modular 350 nm 700 V UHV technology. It is based on a low mask count 350 nm 5 V single gate core process with an comprehensive set of out-of-the-box components. 
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Modular 350 nm 5 V single gate process
    • Up to 3 metal layers with thick power metal option
    • 20 V, 40 V, 400 V and 700 V HV CMOS transistors with 5V Gate Oxide
    • 40 V, 400 V and 700 V Depletion start-up devices
    • High gain  BJTs
    • Zener diode
    • MIM and poly capacitors
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 

0.6 µm to 1 µm CMOS process families

X-FAB offers a range of mature CMOS process in the 0.6 µm to 1 µm process nodes that come with specialities like high-temperature capability, enhanced voltage range and many modular process options to fit your device needs. All of these processes come with best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling as well as comprehensive analog, digital, and memory IPs.

  • 0.6 µm modular mixed-signal technology with embedded non-volatile memory and high-voltage options

    The XC06 process complements X-FAB's 0.6 µm  modular mixed-signal offering with embedded non-volatile memory and high-voltage options. EEPROM blocks up to 32 kbit and Flash memories up to 512 kbit can be integrated in standard cell, semi-custom and full custom designs for industrial, automotive and telecommunication products.

    MOS and bipolar transistors are available with breakdown voltages of up to 100 V. The 5 V CMOS core is compatible in design rules and transistor performance with state-of-the-art 0.6 μm CMOS processes.For analog applications, several capacitor and resistor devices can be realized using the double poly non-volatile memory architecture.

    Key features:

    • Standard 5V 0.6 µm CMOS core module
    • ESD implant module
    • Medium-voltage NMOS and PMOS
    • Medium/high-voltage depletion NMOS 
    • High-voltage graded PMOS 
    • Extended high-voltage DMOS 
    • Exended high-voltage PMOS
    • Triple well isolated CMOS
    • Triple well bulk isolated CMOS
    • Double poly capacitor/(high resistor/low T.C.) 
    • Linear capacitor
    • Schottky diode 
    • ROM, EEPROM and FLASH options
    • Optical window module
    • PIN diode option
    • 3 metal layers and thick metal option
  • 0.6 µm modular BCD-on-SOI technology platform

    XT06 is X-FAB’s mature 0.6 µm modular high-voltage BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and an cost effective 0.6 µm 3 metal layers process. XT06 features high-voltage primitive devices from 8 V to 60 V as well as a range of non-volatile memory options with operating temperature range of -40 to 125 °C. 
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Modular 0.6 µm 5 V single poly core process
    • Up to 3 metal layers with thick power metal option
    • 8 V, 12 V, 30 V and 60 V HV transistors with 18 V gate oxide
    • 8 V and 30 V depletion devices
    • Vertical PNP and NPN BJTs
    • Protection, rectifier and schottky diodes
    • 60 V resistors and capacitors
    • EasyFuse and EEPROM NVM IP options
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
  • 0.6 µm modular CMOS technology

    XB06 is X-FAB’s mature 0.60 µm modular BiCMOS technology. It is a cost effective 0.60 µm 3 metal layers process with excellent analogue performance and accurate device matching. XB06 features a large number of bipolar primitive devices, high voltage primitive devices up to 30 V as well as a range of non-volatile-memory options with operating temperature range of -40 to 125 °C. XB06 supports high speed optical sensors with PIN photodiodes.
    Best-in-class PDK support for all major EDA vendors and a complete set of analog, digital, and memory IPs.

    Key features:

    • Modular 0.60 µm 5 V double poly core process
    • Up to 3 metal layers with thick power metal option
    • 12 V and 30 V HV transistors with 15 V gate oxide
    • 5 V and 30 V depletion devices
    • High performance vertical and lateral PNP & NPN BJTs
    • MIM and PIP capacitors
    • Schottky diodes
    • N-channel JFET
    • EPROM and fuse NVM IP options
    • Integrated fast PIN photodiodes
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
  • 0.6 µm modular high-voltage CMOS technology

    The XHB06 is X-FAB's 0.6 µm high-voltage CMOS technology, optimized for applications requiring operating voltages of 5 V to 30 V. Main target applications are power management, RF circuits and high precision analog applications mixed with digital parts for telecommunication, consumer, automotive and industrial products. The digital part is fully compatible with X-FAB's 0.6 µm process family. Reliable design rules, precise SPICE models, cell libraries, IPs and development kits support the process for major EDA vendors.

    Key features:

    • Standard CMOS core module
    • Base resistor module
    • Poly2 module
    • NPN & HV NPN module
    • Double poly capacitor module
    • MIM capacitor module
    • High resistive poly module
    • Depletion NMOS module
    • Varicap diode option
    • Schottky diode option
    • EPROM 
    • Optical window option
    • No-buried-layer-doping module
    • 3 metal layers
    • Thick third metal 
    • Polyimide module
    • Light shield module
  • 0.8 µm modular mixed-signal technology

    The CX08 process is X-FAB's 0.8 µm modular mixed-signal technology. Main target applications are standard cell, semi-custom and full custom designs for industrial, telecommunication and automotive products - including the 42 V board net. Based on a state-of-the-art single poly double metal 0.8 μm drawn gate length N-well process for digital applications, various process modules are available for high performance analog and high-voltage circuits.

    Key features:

    • Standard 5 V 0.8 µm CMOS core module
    • High-voltage CMOS module
    • Extended high-voltage CMOS module
    • Double poly capacitor option
    • High resistivity poly resistor option
    • ESD implant module
    • EEPROM
    • 3 metal layers
    • Thick third metal
    • Optical window option
       
  • 1.0 µm modular mixed-signal technology

    The XC10 process is X-FAB's one micrometer modular mixed-signal technology. Main target applications are standard cell, semi-custom and full custom designs for automotive, consumer, industrial and telecommunication products. The process enables mixed-signal systems on one chip due to its non-volatile memory and sensor integration capabilities. Based on a state-of-the-art very cost effective single poly single metal 1.0 µm minimum feature size N-well process for mixed-signal and high-voltage applications, various process modules are available for high performance analog and high-voltage circuits. Using the non-volatile memory modules, an integration of EEPROM, OTP or NV latches is possible. Technology variants for integrated MEMS are also available.

    Key features:

    • Standard 5 V or low voltage 1.5 V CMOS core module
    • Depletion implant module
    • Depletion Transistor module
    • Double poly capacitor/(high resistor/low T.C.) resistor module
    • High-voltage PMOS 
    • ESD implant module
    • 2 metal layers
    • Thick second metal
    • EEPROM and EPROM
    • Optical window option
    • Relative pressure sensor integration
    • Absolute pressure sensor integration

SOI processes

  • 130 nm RF SOI platform

    XR013 is our 130 nm modular, feature-rich RF SOI technology solution suitable for multiple air interface standards and both fixed and mobile applications, such as smartphones, infrastructure and WLAN connectivity devices. The high isolation and low insertion losses make XR013 a good fit for RF switching applications in front-end modules for 2G, 3G, 4G LTE Advanced and 5G New Radio designs. Low-noise amplifiers demonstrating low noise figure, high gain and high linearity thanks to NFET options complete our XR013 RF SOI offer.

    Key features:

    • Low RonCoff figure of merit for RF switches with surface-potential-based (PSP) compact models, including advanced modelization of a high-impedance SOI substrate
    • Low-noise, high-gain, high-linearity NFET options for RF switch and low-noise amplifier integration
    • 2.5 V CMOS platform with hybrid Cu/Al metallization with optional thick Cu levels
    • Both low- and high-value diffusion and poly resistors including a 3 kΩ/sq p-poly resistor
    • High-density vertical RF metal–insulator–metal (MIM) capacitor and vertical parallel plate capacitors (VPP)
    • Large catalog of high-Q, symmetric, octagonal inductors for multiple metallization configurations
    • 1.2 V- and 2.5 V-based RF varactors 
    • Optional low-leakage 1.2 V CMOS module 
    • Si-proven RF reference kits 
    • Si-proven analog and digital IP
    • Si-proven eFuse and supporting IP 
    • Si-proven general-purpose input/output (GPIO) libraries including electrostatic discharge (ESD) solutions 
    • Cadence-based front-end design flow with back-end support for both Cadence and Mentor
  • Automotive 180 nm BCD-on-SOI technology platform

    XT018 is X-FAB’s premier 180 nm modular high-voltage BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and those of a state-of-the-art six metal layers 180 nm process. XT018 features a complete portfolio of voltage options from 10 V to 200 V as well as a full range of automotive grade-0 qualified non-volatile memory options. 
    The XT018 platform is specifically designed for a next generation automotive, industrial and medical applications operating in the temperature range of -40 to 175 °C.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modeling, comprehensive set of analog, digital, and memory IPs.

    Key features:

    • Fully modular 180 nm SOI process based on low mask count 5 V Single Gate core module
    • Up to six metal layers with different thick metal and CuRDL options
    • Deep Trench Isolation and Handle Wafer Contact
    • Up to 175 ºC operating temperature supporting AEC-Q100 Grade 0
    • Unique integration of digital, analog, HV, NVM and SOI in a single process 
    • High-reliability automotive NVM solutions including Flash
    • 10 V – 200 V HV CMOS transistors
    • Excellent specific Ron HV N-channel device performance 
    • High gain BJTs
    • Very fast forward HV, Schottky and Zener diodes
    • Standard and High capacitance single, double, triple MIM and Metal Fringe capacitors
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner
    • Silicon Frontline R3D support for metal optimization 
  • 0.6 µm modular BCD-on-SOI technology platform

    XT06 is X-FAB’s mature 0.6 µm modular high-voltage BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and an cost effective 0.6 µm 3 metal layers process. XT06 features high-voltage primitive devices from 8 V to 60 V as well as a range of non-volatile memory options with operating temperature range of -40 to 125 °C. 
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Modular 0.6 µm 5 V single poly core process
    • Up to 3 metal layers with thick power metal option
    • 8 V, 12 V, 30 V and 60 V HV transistors with 18 V gate oxide
    • 8 V and 30 V depletion devices
    • Vertical PNP and NPN BJTs
    • Protection, rectifier and schottky diodes
    • 60 V resistors and capacitors
    • EasyFuse and EEPROM NVM IP options
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
  • 1 µm 90 V 225 ˚C SOI technology platform

    XI10 is a robust dielectric trench insulated 90 V technology solution supporting up to 225 ˚C junction temperature. The 13 layers 90 V core process module provides trench insulation, single level poly and 3 level of metal. 
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, digital and memory IPs.

    Key features:

    • 1 µm single poly 3 metal core process
    • 5 V CMOS transistors 
    • 40 V, 60 V and 90 V NMOS and 30 V and 40 V PMOS transistors 
    • High temperature Tungsten metalization option 
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
       
  • 1 µm modular 625V BCD-on-SOI technology platform

    XDH10 is a robust dielectric trench insulated Ultra High Voltage (UHV) technology solution. The modular process provides a wide variety of passive, MOS and bipolar devices with dielectric bi-directional high voltage trench insulation. The 14 layers 625 VOP core process module provides trench insulation, single level poly with thick gate oxide and a third level metal with power metal. 
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Modular 1 µm single poly 3 metal core process
    • 5 V and 7 V CMOS transistors 
    • 15 V , 20 V and 32 V NMOS and 20 V PMOS transistors 
    • Scalable UHV NDMOS & PMOS transistors 
    • 600 V IGBT
    • High performance NPN and PNP transistors with up to 600 VCE 
    • 7 V and UHV depletion transistors 
    • Schottky and Zener diodes 
    • 650 V capacitor and resistor
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
       
  • 1 µm modular 340 V BCD-on-SOI technology platform

    XDM10 is a robust dielectric trench insulated Ultra High Voltage (UHV) technology solution. The modular process provides a wide variety of passive, MOS and bipolar devices with dielectric bi-directional high voltage trench insulation. The 14 layers 340 VOP core process module provides trench insulation, single level poly with thick gate oxide and a third level metal with power metal. 
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Modular 1 µm single poly 3 metal core process
    • 5 V and 7 V CMOS transistors 
    • 15 V , 20 V and 32 V NMOS and 20 V PMOS transistors 
    • Scalable UHV NDMOS & PMOS transistors 
    • 340 V IGBT
    • High performance NPN and PNP transistors with up to 330 VCE  
    • 7 V and UHV depletion transistors 
    • Schottky and Zener diodes 
    • 350 V capacitor and resistor
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 

MEMS

X-FAB MEMS Foundry offers unsurpassed experience, expertise and execution with its high-volume MEMS manufacturing service. As the first ever pure-play MEMS foundry, X-FAB draws on more than 20 years MEMS manufacturing experience and continues to meet the new demands for this rapidly expanding and exciting group of technologies in terms of time to market, quality assurance, high yield and supply-chain management tools.

Operating from six fabs for MEMS and CMOS processes and an ecosystem of manufacturing and design partners, X-FAB is the proven choice for process development and installation, process capability, design support and long-term manufacturing stability.

As well as customer specific process installation, X-FAB offers a range of in-production standard process blocks, open-platform processes and IP blocks for key MEMS applications that enable fast time to market.

X-FAB MEMS Foundry offers an established, fast and professional service for contract manufacturing of MEMS and micro-machined structures that can grow with your high-volume business. Specific solutions are available for:

X-FAB's MEMS manufacturing is now focused on two locations, Erfurt and Itzehoe, both in Germany. However, X-FAB leverages the operations of all six of its manufacturing sites for the manufacturing of MEMS, which complements X-FAB’s other foundry solutions addressing optical, CMOS analog/mixed-signal and high voltage applications. A core competency of X-FAB is the monolithic integration of MEMS devices with CMOS technology to meet size and performance requirements. X-FAB also offers access to one of the broadest range of manufacturing materials in the semiconductor industry.

SiC & GaN

X-FAB is the first pure-play foundry to provide comprehensive processing technologies for wide bandgap (WBG) materials Silicon Carbide (SiC) and Gallium Nitride (GaN). We are offering foundry services for those new materials on the scale of silicon, using the existing silicon manufacturing lines. We are processing GaN-on-Si wafers in our modern 8” fab in Dresden, Germany and SiC wafers in our 6” fab in Lubbock, Texas, USA. By running the non-silicon wafers on the same lines as Si-wafers, our customers have access to high-quality and cost-effective foundry solutions. It allows customers to import their projects into a stable and trusted, fully automotive-qualified fab environment which supports output levels that are comparable with silicon yields.

X-FAB has a long history in processing SiC and GaN, ranging back to early 2013, with just a few customers starting to engage with those “exotic” materials. In this time, we gained significant knowledge and expertise and developed a business model that allows even less experienced customers to create their own SiC power devices or GaN HEMT devices. 

With our sites in Dresden and Lubbock focused on serving the growing markets, the company is fully prepared for the expected acceleration of SiC and GaN device shipments – enabling key applications, such as charging applications, electric vehicles and advanced power management systems.

Heterogeneous Integration

Heterogeneous 3D integration of semiconductor components is a main driver within the microelectronics industry towards higher integration complexity, enhanced system performance and economies of scale. Our technology offering of 3D integration and wafer-level packaging methods enables solutions for system integration of analog/mixed-signal integrated circuits , sensors and MEMS. These components are essential for the next-generation microelectronics products of our customers in the key markets automotive, industrial, medical and mobile communication

Contact

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