Our Technology Portfolio
As a pure-play foundry specialized in analog/mixed-signal applications, we offer a wide range of modular CMOS and SOI processes in geometries ranging from 1.0 µm to 130 nm as well as special MEMS and SiC process capabilities.
CMOS & SOI overview
Overview of X-FAB's CMOS and SOI process options ranging from 130 nm to 1.0 µm.
Digital | Analog Mixed Signal | High Voltage | NVM | RF | Opto | SOI | High Temp | |
|---|---|---|---|---|---|---|---|---|
1.0 µm | ||||||||
0.6 µm | ||||||||
350 nm | ||||||||
180 nm | ||||||||
130 nm |
X-FAB's CMOS process offering
180 nm CMOS process family
Automotive 180 nm sensor and high-voltage technology platform
XH018 is a powerful modular 180 nm sensor and high-voltage EPI technology. It combines the benefit of a 180 nm modular 1.8 V / 3.3 V ultra low noise process supporting an extended temperature range of -40 to 175°C with an extensive portfolio of high-voltage and analog devices as well as a range of automotive grade non-volatile memory options. In addition, multiple fully characterized photodiode and APD/SPAD options are available. The XH018 platform is designed for smart sensor, sensor interface and actuator applications.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.
Key features:
- Fully modular 180 nm EPI process based on 1.8 V / 3.3 V dual gate core module
- Up to six metal layers with different thick metal options
- Up to 175ºC operating temperature supporting AEC-Q100 grade 0
- Unique integration of digital, analog, HV and NVM in a single process
- High-reliability automotive NVM solutions including embedded Flash, NVRAM and OTP
- Optional ultra-low-noise 1.8 V and 3.3 V CMOS
- Fully characterized photodiodes and APD/SPAD
- 10 V to 45 V high-voltage CMOS transistors with 18 V gate oxide
- High gain BJTs
- HV Schottky diodes
- Standard and high capacitance single, double, triple MIM and metal fringe capacitors
- Multiple 1.8 V and 3.3 V libraries available to enable complex designs
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
Automotive 180 nm high-voltage and analog/mixed-signal technology platform
XP018 is a modular 180 nm high-voltage EPI technology. It combines the benefit of a 180 nm 5 V based process supporting an extended temperature range of -40 to 175 °C with an extensive portfolio of high voltage and analog devices as well as a range of automotive grade non-volatile-Memory options. The XP018 platform is specifically designed for cost sensitive and robust automotive, industrial and medical applications.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.
Key features:
- Fully modular 180 nm EPI process based on low mask count 5 V single gate core module
- Up to six metal layers with different thick metal options
- Up to 175ºC operating temperature supporting AEC-Q100 grade 0
- Unique integration of digital, analog, HV and NVM in a single process
- High-reliability automotive NVM solutions including embedded Flash, EEPROM and OTP
- 12 V to 60 V high-voltage CMOS transistors
- High gain BJTs
- Schottky and Zener diodes
- Standard and high capacitance single, double, triple MIM and metal fringe capacitors
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
180 nm image sensor technology platform
XS018 is X-FAB’s specialized process for fast image sensors and high-sensitive photodiodes. The optional available modules for 4 transistor cells, pinned photo diodes and the stitching capabilities make this technology ideal for large image sensor applications needing high frame rates as used for instance for medical and scientific X-ray cameras.
A photodiode-specific process-core module allows the realization of best-in-class UV-photodiodes as well as high-sensitive photodiode for ambient and near-infrared light. All major EDA vendors are supported. Extensive device characterization and modelling (also for photodiodes), comprehensive analog, digital, and memory IPs are available.
Key features:
- Fully modular 180nn EPI process based on low mask count 3.3V Single Gate core module
- 3.3V/1.8V core process options
- Up to six metal layers with different thick metal options
- Thin top metal option
- Pinned photodiode module with choice of 4 different pinning voltages
- Low threshold voltage NMOS with choice of 5 different threshold voltages
- Pixel reference designs from 3.6 to 200µm
- Six different photodiodes supporting UV, ambient and NIR light
- High value poly resistors
- Standard and High capacitance single, double, triple MIM and Metal Fringe capacitors
- Low noise depletion and buried channel transistors
- Support of 1D and 2D stitching
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
Automotive 180 nm BCD-on-SOI technology platform
XT018 is X-FAB’s premier 180 nm modular high-voltage BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and those of a state-of-the-art six metal layers 180 nm process. XT018 features a complete portfolio of voltage options from 10 V to 200 V as well as a full range of automotive Grade-0 qualified Non-Volatile-Memory options.
The XT018 platform is specifically designed for a next generation automotive, industrial and medical applications operating in the temperature range of -40 to 175 °C.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modeling, comprehensive set of analog, digital, and memory IPs.
Key features:
- Fully modular 180 nm SOI process based on low mask count 5 V Single Gate core module
- Up to six metal layers with different thick metal options
- Deep Trench Isolation and handle wafer contact
- Up to 175 ºC operating temperature supporting AEC-Q100 Grade 0
- Unique integration of digital, analog, HV, NVM and SOI in a single process
- High-reliability automotive NVM solutions including embedded Flash, EEPROM and OTP
- 10 V to 200 V high-voltage CMOS transistors
- Excellent specific Ron HV N-channel device performance
- High gain BJTs
- Very fast forward HV, Schottky and Zener diodes
- Standard and high capacitance single, double, triple MIM and metal fringe capacitors
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
- Silicon Frontline R3D support for metal optimization
350 nm CMOS process family
With our 350 nm process family you can design chips for a wide range of applications. All four processes come with best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling as well as comprehensive analog, digital, and memory IPs.
Comprehensive 350 nm sensor and high-voltage technology platform
XH035 is a comprehensive modular 350 nm sensor and high-voltage EPI technology. It combines the benefit of a 350 nm modular 3.3 V ultra low noise process with an extensive portfolio of high voltage and analog devices. The XH035 platform is designed for robust sensor and sensor interface applications.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.
Key features:
- Fully modular 350 nm EPI process based on 3.3 V ultra low noise core module
- Alternative 5 V core module or 3.3 V / 5 V dual gate
- Best-in-class ultra low noise 3.3 V PMOS
- Up to four metal layers with thick metal options
- Up to 125 ºC operating temperature supporting AEC-Q100 grade 1
- Unique integration of digital, analog, HV and NVM in a single process
- High-reliability automotive NVM solutions including EEPROM
- Optical window etching and Anti Reflecting Coating for high sensitive photodiodes
- 10 V – 100 V HV CMOS transistors with 3.3 V, 5 V or 18 V Gate Oxide
- High gain BJTs
- HV Schottky diodes
- Standard single, double MIM, Poly and metal fringe capacitors
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
Comprehensive 350 nm automotive sensor and high-voltage technology platform
XA035 is a comprehensive modular 350 nm sensor and high-voltage EPI technology. It combines the benefit of a 350 nm modular 3.3 V ultra low noise process supporting an extended temperature range of -40 to 175 °C with an extensive portfolio of high voltage and analog devices. The XA035 platform is designed for robust automotive sensor, sensor interface and actuator applications.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.
Key features:
- Fully modular 350 nm EPI process based on 3.3 V ultra low noise core module
- Optional 3.3 V / 5 V dual gate
- Best-in-class ultra low noise 3.3 V PMOS
- Up to four metal layers with thick metal options
- Up to 175 ºC operating temperature supporting AEC-Q100 grade 0
- Unique integration of digital, analog, HV and NVM in a single process
- High-reliability automotive NVM solutions including EEPROM
- Optical window etching and Anti Reflecting Coating for high sensitive photodiodes
- 10 V – 100 V HV CMOS transistors with 3.3 V, 5 V or 18 V Gate Oxide
- High gain BJTs
- HV Schottky diodes
- Standard single, double MIM, Poly and Metal Fringe capacitors
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
350 nm modular sensor technology platform
XO035 is X-FAB’s specialized process for high-speed optoelectronics. It is especially suited for applications needing high-sensitive high- bandwidth photo diodes arrays for such as optical data storage, optical data communication or high dynamic range sensors. Special opto-process modules allow an optimised PIN cathode implantation, optical window etching and dedicated ARC layer deposition.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.
Key features:
- Fully modular 350 nm EPI process based on 3.3V core module
- Alternative 5 V module
- Up to four metal layers with different thick metal options
- High-sensitive PIN photodiodes
- Optical window etching and Anti Reflecting Coating optimized for different wavelengths
- High gain BJTs
- Standard single, double MIM, Poly and metal fringe capacitors
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
0.6 µm to 1 µm CMOS process families
X-FAB offers a range of mature CMOS process in the 0.6 µm to 1 µm process nodes that come with specialties like high-temperature capability, enhanced voltage range and many modular process options to fit your device needs. All of these processes come with best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling as well as comprehensive analog, digital, and memory IPs.
0.6 µm automotive sensor and high-voltage technology platform
XC06 is a comprehensive modular 0.6 µm sensor and high-voltage EPI technology. It combines the benefit of a 0.6 µm modular 5 V process with an extensive portfolio of high voltage, analog devices and non-volatile memory options. The XC06 platform features fast PIN diode and is well suited for automotive, industrial and medical applications. Best-in-class PDK support for all major EDA vendors and a complete set of analog, digital, and memory IPs.
Key features:
- Modular 0.6 µm 5 V single poly, double metal core process
- Up to 3 metal layers with thick power metal option
- Up to 2 poly layers with CAPRES option
- Up to 125 ˚C operating temperature supporting AEC-Q100 Grade 1
- Unique integration of digital, analog, HV and NVM in a single process
- 8 V – 60 V HV CMOS transistors with 18 V Gate Oxide
- HV JFET
- High-reliability automotive NVM solutions including EEPROM and Flash
- High Gain Vertical PNP and NPN BJTs
- HV BJTs
- Schottky diode
- Integrated fast PIN photodiodes
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
0.6 µm modular BCD-on-SOI technology platform
XT06 is X-FAB’s mature 0.6 µm modular high-voltage BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and an cost effective 0.6 µm process. XT06 features high-voltage primitive devices from 8 V to 60 V as well as a range of non-volatile memory options with operating temperature range of -40 to 125 °C.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.
Key features:
- Modular 0.6 µm 5 V single poly core process
- Up to 3 metal layers with thick power metal option
- 8 V, 12 V, 30 V and 60 V HV transistors with 18 V gate oxide
- 8 V and 30 V depletion devices
- Vertical PNP and NPN BJTs
- Protection, rectifier and Schottky diodes
- 60 V resistors and capacitors
- EasyFuse and EEPROM NVM IP options
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
0.6 µm modular CMOS technology
XB06 is X-FAB’s mature 0.60 µm modular BiCMOS technology. It is a cost effective 0.60 µm 3 metal layers process with excellent analogue performance and accurate device matching. XB06 features a large number of bipolar primitive devices, high voltage primitive devices up to 30 V as well as a range of non-volatile memory options with operating temperature range of -40 to 125 °C. XB06 supports high speed optical sensors with PIN photodiodes.
Best-in-class PDK support for all major EDA vendors and a complete set of analog, digital, and memory IPs.
Key features:
- Modular 0.60 µm 5 V double poly core process
- Up to 3 metal layers with thick power metal option
- 12 V and 30 V HV transistors with 15 V gate oxide
- 5 V and 30 V depletion devices
- High performance vertical and lateral PNP & NPN BJTs
- MIM and PIP capacitors
- Schottky diodes
- N-channel JFET
- EPROM and fuse NVM IP options
- Integrated fast PIN photodiodes
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
SOI processes
130 nm RF SOI platform
The XR013 is X-FAB’s 130nm modular and feature-rich RF-SOI technology solution suitable for multiple air-interface standards and both fixed and mobile applications operating in the temperature range of -40 to 125°C. Standard features include a twin-well 2.5 V CMOS technology on a linear, high-impedance SOI substrate with 4 levels of metal in a hybrid copper and aluminum metallization that supports wire-bond, bump, or Cu-pillar chip-package interfaces and a large array of passive analog RF devices. Additional optional features include a range of FET devices including multiple Vt options, up to 2 additional routing, and up to 2 additional thick Cu metal levels.
Globally, the platform offers flexibility to customize and create cost-effective configurations with few mutually exclusive features. XR013 offers a full PDK support for major EDA vendors, comprehensive set of components supported by Si-proven, advanced RF models as well as a wide range of IP as design enablers.
Key features:
- Low Ron * Coff figure of merit RF switches with PSP based compact models including advanced modelization of a high impedance SOI substrate
- Low-noise, high gain, high linearity NFET options for RF switch and LNA integration
- 2.5 V CMOS platform with hybrid Cu/Al metallization. Thick terminal metal is standard
- Both low and high value diffusion and poly resistors including a 3 kW/sq p-poly resistor
- 2.1 fF/µm² vertical RF Metal-Insulator-Metal capacitor and up to 1.32 fF/µm² Vertical parallel plate capacitors
- 1.2 V and 2.5 V based RF varactors
- Optional thick Cu levels provide a high-performance pathway to minimize system losses
- Large catalog of high-Q, symmetric, octagonal inductors for multiple metallization configurations
- Optional low-leakage 1.2 V CMOS feature is exploited to deliver best in class density digital integration
- Si proven RF reference kits
- Si proven analog & digital IP, Efuse and supporting IP
- Si proven GPIO libraries including ESD solutions
Automotive 180 nm BCD-on-SOI technology platform
XT018 is X-FAB’s premier 180 nm modular high-voltage BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and those of a state-of-the-art six metal layers 180 nm process. XT018 features a complete portfolio of voltage options from 10 V to 375 V as well as a full range of automotive grade-0 qualified non-volatile memory options.
The XT018 platform is specifically designed for a next generation automotive, industrial and medical applications operating in the temperature range of -40 to 175 °C.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modeling, comprehensive set of analog, digital, and memory IPs.
Key features:
- Fully modular 180 nm SOI process based on low mask count 5 V single gate core module
- Up to six metal layers with different thick metal options
- Deep Trench Isolation and handle wafer contact
- Up to 175ºC operating temperature supporting AEC-Q100 Grade 0
- Unique integration of digital, analog, HV, NVM and SOI in a single process
- High-reliability automotive NVM solutions including embedded Flash, EEPROM and OTP
- 10 V to 375 V high-voltage CMOS transistors
- Excellent specific Ron HV N-channel device performance
- High gain BJTs
- Very fast forward HV, Schottky and Zener diodes
- Standard and high capacitance single, double, triple MIM and metal fringe capacitors
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
- Silicon Frontline R3D support for metal optimization
0.6 µm modular BCD-on-SOI technology platform
XT06 is X-FAB’s mature 0.6 µm modular high-voltage BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and an cost effective 0.6 µm process. XT06 features high-voltage primitive devices from 8 V to 60 V as well as a range of non-volatile memory options with operating temperature range of -40 to 125 °C.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.
Key features:
- Modular 0.6 µm 5 V single poly core process
- Up to 3 metal layers with thick power metal option
- 8 V, 12 V, 30 V and 60 V HV transistors with 18 V gate oxide
- 8 V and 30 V depletion devices
- Vertical PNP and NPN BJTs
- Protection, rectifier and Schottky diodes
- 60 V resistors and capacitors
- EasyFuse and EEPROM NVM IP options
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
1 µm 90 V 225 ˚C SOI technology platform
XI10 is a robust dielectric trench insulated 90 V technology solution supporting up to 225 ˚C junction temperature. The 13 layers 90 V core process module provides trench insulation, single level poly and 3 level of metal.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, digital and memory IPs.
Key features:
- 1 µm single poly 3 metal core process
- 5 V CMOS transistors
- 40 V, 60 V and 90 V NMOS and 30 V and 40 V PMOS transistors
- High temperature Tungsten metalization option
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and other
1 µm modular 625 V BCD-on-SOI technology platform
XDH10 is a robust dielectric trench insulated Ultra High Voltage (UHV) technology solution. The modular process provides a wide variety of passive, MOS and bipolar devices with dielectric bi-directional high voltage trench insulation. The 14 layers 625 V core process module provides trench insulation, single level poly with thick gate oxide and a third level metal with power metal.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.
Key features:
- Modular 1 µm single poly 3 metal core process
- 5 V and 7 V CMOS transistors
- 15 V, 20 V and 32 V NMOS and 20 V PMOS transistors
- Scalable UHV NDMOS & PMOS transistors
- 600 V IGBT
- High performance NPN and PNP transistors with up to 600 VCE
- 7 V and UHV depletion transistors
- Schottky and Zener diodes
- 650 V capacitor and resistor
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
1 µm modular 340 V BCD-on-SOI technology platform
XDM10 is a robust dielectric trench insulated Ultra High Voltage (UHV) technology solution. The modular process provides a wide variety of passive, MOS and bipolar devices with dielectric bi-directional high voltage trench insulation. The 14 layers 340 V core process module provides trench insulation, single level poly with thick gate oxide and a third level metal with power metal.
Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.
Key features:
- Modular 1 µm single poly 3 metal core process
- 5 V and 7 V CMOS transistors
- 15 V, 20 V and 32 V NMOS and 20 V PMOS transistors
- Scalable UHV NDMOS & PMOS transistors
- 340 V IGBT
- High performance NPN and PNP transistors with up to 330 VCE
- 7 V and UHV depletion transistors
- Schottky and Zener diodes
- 350 V capacitor and resistor
- Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
MEMS
SiC & GaN
Heterogeneous Integration
Heterogeneous 3D integration of semiconductor components is a main driver within the microelectronics industry towards higher integration complexity, enhanced system performance and economies of scale. Our technology offering of 3D integration and wafer-level packaging methods enables solutions for system integration of analog/mixed-signal integrated circuits, sensors and MEMS. These components are essential for the next-generation microelectronics products of our customers in the key markets automotive, industrial, medical and mobile communication.
Contact
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