Using the benefits of dielectric isolation in BCD-on-SOI Technologies for your next first-time-right design

While BCD-on-SOI was traditionally considered a niche technology, it has seen a steep rise in adoption in recent years from all major market segments. The higher SOI substrate cost is more than compensated by the many benefits that come with BCD-on-SOI technologies. X-FAB developed its first BCD-on-SOI technology more than 25 years ago and now offers the most extensive foundry BCD-on-SOI technology portfolio.
Our modular processes combine the benefits of dielectric isolation through buried oxide (BOX) and deep trench isolation (DTI) with a wide range of robust HV CMOS, bipolar and well-matched passive primitive devices. XT018 is our leading 180 nm BCD-on-SOI technology solution supporting automotive AEC-Q100 Grade 0 designs and also satisfying the more stringent automotive reliability requirements which become challenging to deal with in Bulk BCD processes.
Learn more about the benefits of dielectric isolation in BCD-on-SOI technologies like latch-up immunity, voltage scalable isolation and ESD-protection, ease of design for circuits with multiple voltage domains and simpler ways to handle AC-coupling effects.

Presenter:

Tilman Metzger, Technical Marketing Manager High Voltage
Dr. Alexander Hoelke, Senior Member Process Development
Guido Janssen, Principal Engineer Design Support