A Physically-Based Matching Model for HVMOS Transistors

Abstract—This paper, presents a physically-based matching model that includes mismatch fluctuations in HiSIM_HV MOSFET model. Analytical expressions of the variation associated to the threshold voltage, current factor, and drift region resistor were developed and added to the compact model. The proposed model predicts accurately the mismatch in the drain current over a wide operating range and uses only three model parameters. This was validated through Monte Carlo simulations compared to experimental measurements on several device classes from X-FAB 0.18 um processes. The results of the drain current mismatch, the standard deviation of threshold voltage, and the standard deviation of the current factor are presented here and show good agreement between measurements and simulations.