Find our technical papers, webinars, articles
The ResourceXplorer enables you to access technical papers, webinars and articles related to analog/mixed-signal semiconductor technologies.
305 entries found
Is it worth to talk about the device characterization of breakdown voltage?
It should be a simple number extracted from a IV -curve
CMOS foundry point of view but there is more behind them
Most important parameter to monitor the CMOS process
Shift in the breakdown voltage refer to issues in the process
Therefore, the methodology how to extract the breakdown voltage or even the IV-curve is essential
By choosing the “AVLA” process module in XH018
Enable the primitive device of avalanche photodiode and single photon avalanche diode
Necessity to monitor the process for both devices
Integration concept of GaN on SOI has been validated
- Possible to integrate GaN HEMT on a SOI circuit
- The HEMT is still functional after process
Vertical coupling decreased thanks to the buried oxide
- However, unexpected increase in Coff has been observed
To our knowledge, this is the first time that this heterogeneous integration technique is used for RF applications
(Webinar is presented in Mandarin)
More complex designs, shorter time to market and less time for engineering – these are the challenges IC designers are facing today. X-FAB will be addressing these topics to assist you in your design process and to support you to achieve First-Time-Right designs.
- Micro-Transfer-Printing (µTP) was introduced as a new and promising technology for 3D- and heterogeneous integration.
- The main advantage of µTP is the parallel placement of up to thousands of small chiplets with a very high printing accuracy.
Partial SOI (PSOI) is revisited as a suitable High Voltage (HV) architecture for Power Integrated Circuits (PICs). The added process complexity compared to SOI RESURF is offset by the better heat conduction due to thinner BOX, the wider voltage range capability and the reduced parasitic capacitance to the Handle Wafer (HW). The new proposed platform technology is therefore particularly relevant to the manufacturing of high voltage integrated circuits (HVICs) where low Ron, fast switching and reduced self-heating are essential. This work reports on the extension of a 200V PSOI process to 400V while providing competitive Ron and low HCI degradation.
Wetten, du bist uns schon einmal begegnet? Ob beim Entsperren des Smartphones, in deinem Auto oder Zuhause: X-FAB steckt überall da, wo die analoge und digitale Welt zusammentreffen. Mikrochips made by X-FAB findest du in Smart Watches, Herzschrittmachern, Industrierobotern, Elektroautos, Herzschrittmachern, und vielem mehr.
Als sogenannte Foundry fertigen wir analog-digitale integrierte Schaltkreise auf Siliziumwafern im Kundenauftrag. Mit circa 100.000 Wafer-Starts pro Monat sind wir mit unseren sechs Standorten auf drei Kontinenten und rund 4.000 MitarbeiterInnen einer der weltweit führenden Spezial-Halbleiterhersteller.
Polysilicon is an integral part of many devices in all CMOS process. Very consistent and accurate electrical performance of such material is a need of those devices used in Circuit Under Pad (CUP) applications. This paper presents an investigation on stress impact of probe insertions on two bond pad metal options i.e. METMID and METTHK on a polysilicon resistor placed under the bond pad. Probing results in residual stress on both Back End Of Line (BEOL) as well as Front End Of Line (FEOL) structures. This residual stress would impact the electrical properties of the polysilicon material used in such devices. In this study, such electrical impact is measured in terms of change in resistance of a polysilicon resistor which was placed underneath the bond pads.
Use of MIMO and beamforming to increase the radiated power. Challenges:
- Performances: at mmWave frequencies, it is important to minimize loss and locate the front-end components close to the radiating elements.
- Mechanicals: the spacing between phased-array elements (λ/2) becomes too small, 5.3 mm at 28 GHz.
Be aware of the avalanche! Learn how an avalanche photodiode (APD) works and see which devices X-FAB is offering for integration in its modular high voltage XH018 process.
Everybody is talking about single photon avalanche diodes (SPAD) for LiDAR and Time-of-Flight. Do you know what is required to upgrade from an APD to a SPAD? How can a good active quenching circuit be designed?
The webinar will introduce newly-developed APD and SPAD devices. You will be provided with information about the key parameters and learn how to integrate them into X-FAB’s process. X-FAB is offering a reference circuit for active quenching: discover how it works and how it could reduce your time for design.