5G demonstrators designed with heterogeneous GaN+SOI technology
Published: Sep 2019
Use of MIMO and beamforming to increase the radiated power. Challenges:
- Performances: at mmWave frequencies, it is important to minimize loss and locate the front-end components close to the radiating elements.
- Mechanicals: the spacing between phased-array elements (λ/2) becomes too small, 5.3 mm at 28 GHz.
5G-NR : our ambition
X-FAB aims to serve the need for high-performance RF Front-End solutions
GaN: highest cost with GaN/SiC. Maturity of GaN/Si improving
GaAs: mature and available at medium cost
SiGe: mature, medium power, good integration with moderate cost
Si: the most mature, lowest power, highest integration at lowest cost for high volumes