EuMW2020 RF SPST Switch based on Innovative Heterogeneous GaN-SOI Integration Technique

Published: Jan 2021

Integration concept of GaN on SOI has been validated

  • Possible to integrate GaN HEMT on a SOI circuit
  • The HEMT is still functional after process

Vertical coupling decreased thanks to the buried oxide

  • However, unexpected increase in Coff has been observed 

To our knowledge, this is the first time that this heterogeneous integration technique is used for RF applications

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