EuMW2020 RF SPST Switch based on Innovative Heterogeneous GaN-SOI Integration Technique

Integration concept of GaN on SOI has been validated

• Possible to integrate GaN HEMT on a SOI circuit
• The HEMT is still functional after process

Vertical coupling decreased thanks to the buried oxide

• However, unexpected increase in Coff has been observed 

To our knowledge, this is the first time that this heterogeneous integration technique is used for RF applications