BCD-on-SOI

BCD-on-SOI

X-FAB offers the most extensive foundry BCD-on-SOI technology portfolio. Our modular solutions combine the benefits of SOI wafers with deep trench isolation (DTI) and a wide range of robust HV CMOS, bipolar and well-matched passive primitive devices.

Key benefits of our BCD-on-SOI solutions are:

  • Reduced isolation distances
  • No parasitic bipolar effects to substrate, latch-up can be completely eliminated
  • Excellent EMI and EMC robustness
  • Simplifies handling of below-ground supply voltages and negative transients
  • Compact implementation of voltage stacking while greatly reducing cross-talk 
  • Support of complex integration of high-density logic with HV and analog devices, including floating high-side configurations
  • Low junction leakage at high temperatures
  • Faster time-to-market (fewer redesigns)
  • Automotive 110nm BCD-on-SOI Technology Platform

    XT011 is X-FAB’s next generation BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and those of a state-of-the-art 110 nm process. It offers more than twice the standard cell library density compared to XT018.


    XT011 features multile high voltage options and a range of automotive Grade-0 non-volatile memory options. The XT011 platform is specifically designed for a next generation automotive, industrial and medical applications operating in the temperature range of -40°C to 175°C. Full PDK support for major EDA vendors, extensive device characterization and modeling, comprehensive set of digital and memory IPs.

     

    Key features:

    • Fully modular 110nm SOI process based on low mask count 5V Single Gate core module
    • Up to eight metal layers with different thick metal options
    • Deep Trench Isolation 
    • Up to 175ºC operating temperature supporting AEC-Q100 Grade 0
    • Unique integration of digital, analog, HV, NVM and SOI in a single process 
    • High-reliability automotive NVM solutions including Flash
    • 12V - 60V HV CMOS transistors
    • Excellent specific Ron HV N-channel device performance 
    • Metal Fringe capacitors
    • Comprehensive PDK support for Cadence, Mentor, Synopsys and Tanner 
  • Automotive 180 nm BCD-on-SOI technology platform

    XT018 is X-FAB’s premier 180 nm modular high-voltage BCD-on-SOI technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and those of a state-of-the-art six metal layers 180 nm process. XT018 features a complete portfolio of voltage options from 10 V to 375 V as well as a full range of automotive grade-0 qualified non-volatile memory options. 
    The XT018 platform is specifically designed for a next generation automotive, industrial and medical applications operating in the temperature range of -40 to 175°C.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modeling, comprehensive set of analog, digital, and memory IPs.

    Applications enabled by XT018

    Key features:

    • Fully modular 180 nm SOI process based on low mask count 5 V Single Gate core module
    • Up to six metal layers with different thick metal options
    • Deep Trench Isolation and Handle Wafer Contact
    • Up to 175ºC operating temperature supporting AEC-Q100 Grade 0
    • Unique integration of digital, analog, HV, NVM and SOI in a single process 
    • High-reliability automotive NVM solutions including embedded Flash, EEPROM and OTP
    • 10 V to 375 V high-voltage CMOS transistors
    • Excellent specific Ron HV N-channel device performance 
    • High gain BJTs
    • Very fast forward HV, Schottky and Zener diodes
    • Standard and high capacitance single, double, triple MIM and metal fringe capacitors
    • Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
    • Silicon Frontline R3D support for metal optimization 
  • 1 µm modular 625 V BCD-on-SOI technology platform

    XDH10 is a robust dielectric trench insulated Ultra High Voltage (UHV) technology solution. The modular process provides a wide variety of passive, MOS and bipolar devices with dielectric bi-directional high voltage trench insulation. The 14 layers 625 V core process module provides trench insulation, single level poly with thick gate oxide and a third level metal with power metal. 
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Modular 1 µm single poly 3 metal core process
    • 5 V and 7 V CMOS transistors 
    • 15 V, 20 V and 32 V NMOS and 20 V PMOS transistors 
    • Scalable UHV NDMOS & PMOS transistors 
    • 600 V IGBT
    • High performance NPN and PNP transistors with up to 600 VCE 
    • 7 V and UHV depletion transistors 
    • Schottky and Zener diodes 
    • 650 V capacitor and resistor
    • Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
  • 1 µm modular 340 V BCD-on-SOI technology platform

    XDM10 is a robust dielectric trench insulated Ultra High Voltage (UHV) technology solution. The modular process provides a wide variety of passive, MOS and bipolar devices with dielectric bi-directional high voltage trench insulation. The 14 layers 340 V core process module provides trench insulation, single level poly with thick gate oxide and a third level metal with power metal. 
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Modular 1 µm single poly 3 metal core process
    • 5 V and 7 V CMOS transistors 
    • 15 V, 20 V and 32 V NMOS and 20 V PMOS transistors 
    • Scalable UHV NDMOS & PMOS transistors 
    • 340 V IGBT
    • High performance NPN and PNP transistors with up to 330 VCE  
    • 7 V and UHV depletion transistors 
    • Schottky and Zener diodes 
    • 350 V capacitor and resistor
    • Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others

Contact

Tilman Metzger

Technical Marketing Manager
High Voltage

For more information, please contact us: