High Voltage CMOS Solutions

High-voltage CMOS solutions

X-FAB offers a wide range of fully modular HV solutions down to 180 nm. With a clear focus on automotive applications, these technologies are also successfully adopted in medical, industrial and consumer applications. 

The breadth of our available modules and options combined with best-in-class process design kit (PDK) and design support makes them the perfect choice for your applications.

Key features of our HV CMOS solutions are:

  • Up to 175 °C operating temperature supporting AEC-Q100 Grade 0
  • High-reliability automotive NVM solutions including Flash
  • High-gain bipolar junction transistors
  • Schottky and Zener diodes
  • Standard and high-capacitance single, double, triple MIM and metal fringe capacitors
  • Fully characterized photodiodes and APD/SPAD 
  • Optical window etching and antireflective coating for highly sensitive photodiodes
  • Unique integration of digital, analog, HV and NVM solutions in a single modular process
  • Extensive device characterization and modeling support 
  • Wide range of analog, digital and memory IPs
  • Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
  • Automotive 180 nm sensor and high-voltage technology platform

    XH018 is a powerful modular 180 nm sensor and high-voltage EPI technology. It combines the benefit of a 180 nm modular 1.8 V / 3.3 V ultra low noise process supporting an extended temperature range of -40 to 175 °C with an extensive portfolio of high voltage and analog devices as well as a range of automotive grade non-volatile-memory options. In addition, multiple fully characterized photodiode and APD/SPAD options are available. The XH018 platform is designed for smart sensor, sensor interface and actuator applications.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Fully modular 180 nm EPI process based on 1.8 V / 3.3 V dual gate core module
    • Up to six metal layers with different thick metal options
    • Up to 175ºC operating temperature supporting AEC-Q100 grade 0
    • Unique integration of digital, analog, HV and NVM in a single process 
    • High-reliability automotive NVM solutions including embedded Flash, NVRAM and OTP
    • Optional ultra low noise 1.8 V and 3.3 V CMOS
    • Fully characterized photodiodes and APD/SPAD 
    • 10 V to 45 V high-voltage CMOS transistors with 18 V gate oxide
    • High gain BJTs
    • HV Schottky diodes 
    • Standard and high capacitance single, double, triple MIM and metal fringe capacitors
    • Multiple 1.8 V and 3.3 V libraries available to enable complex designs
    • Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
  • Automotive 180 nm high-voltage and analog/mixed-signal technology platform

    XP018 is a modular 180 nm high-voltage EPI technology. It combines the benefit of a 180 nm 5 V based process supporting an extended temperature range of -40 to 175°C with an extensive portfolio of high-voltage and analog devices as well as a range of automotive grade non-volatile-Memory options. The XP018 platform is specifically designed for cost sensitive and robust automotive, industrial and medical applications.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs. 

    Key features:

    • Fully modular 180 nm EPI process based on low mask count 5 V single gate core module
    • Up to six metal layers with different thick metal options
    • Up to 175ºC operating temperature supporting AEC-Q100 grade 0
    • Unique integration of digital, analog, HV and NVM in a single process 
    • High-reliability automotive NVM solutions including embedded Flash, EEPROM and OTP
    • 12 V to 60 V high-voltage CMOS transistors
    • High gain BJTs
    • Schottky and Zener diodes 
    • Standard and High capacitance single, double, triple MIM and metal fringe capacitors
    • Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
  • Comprehensive 350 nm sensor and high-voltage technology platform

    XH035 is a comprehensive modular 350 nm sensor and high-voltage EPI technology. It combines the benefit of a 350 nm modular 3.3 V ultra low noise process with an extensive portfolio of high voltage and analog devices. The XH035 platform is designed for robust sensor and sensor interface applications.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Fully modular 350 nm EPI process based on 3.3 V ultra low noise core module
    • Alternative 5 V core module or 3.3 V / 5 V dual gate
    • Best-in-class ultra low noise 3.3 V PMOS
    • Up to four metal layers with thick metal options
    • Up to 125 ºC operating temperature supporting AEC-Q100 grade 1
    • Unique integration of digital, analog, HV and NVM in a single process 
    • High-reliability automotive NVM solutions including EEPROM
    • Optical window etching and Anti Reflecting Coating for high sensitive photodiodes
    • 10 V – 100 V HV CMOS transistors with 3.3 V, 5 V or 18 V Gate Oxide
    • High gain BJTs
    • HV Schottky diodes 
    • Standard single, double MIM, Poly and metal fringe capacitors
    • Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others
  • Comprehensive 350 nm automotive sensor and high-voltage technology platform

    XA035 is a comprehensive modular 350 nm sensor and high-voltage EPI technology. It combines the benefit of a 350 nm modular 3.3 V ultra low noise process supporting an extended temperature range of -40 to 175 °C with an extensive portfolio of high voltage and analog devices. The XA035 platform is designed for robust automotive sensor, sensor interface and actuator applications.
    Best-in-class PDK support for all major EDA vendors, extensive device characterization and modelling, comprehensive analog, digital, and memory IPs.

    Key features:

    • Fully modular 350 nm EPI process based on 3.3 V ultra low noise core module
    • Optional 3.3 V / 5 V dual gate
    • Best-in-class ultra low noise 3.3 V PMOS
    • Up to four metal layers with thick metal options
    • Up to 175 ºC operating temperature supporting AEC-Q100 grade 0 
    • Unique integration of digital, analog, HV and NVM in a single process 
    • High-reliability automotive NVM solutions including EEPROM
    • Optical window etching and Anti Reflecting Coating for high sensitive photodiodes
    • 10 V – 100 V HV CMOS transistors with 3.3 V, 5 V or 18 V Gate Oxide
    • High gain BJTs
    • HV Schottky diodes 
    • Standard single, double MIM, Poly and Metal Fringe capacitors
    • Comprehensive PDK support for Cadence, Siemens EDA, Synopsys and others

Contact

Tilman Metzger

Technical Marketing Manager
High Voltage

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