ResourceXplorer

Find our technical papers, webinars, articles

The ResourceXplorer enables you to access technical papers, webinars and articles related to analog/mixed-signal semiconductor technologies.



91 entries found



Making chips for automotive has been X-FAB’s core business for about 30 years. With our technologies and IP, we support the transition from combustion engines to electrical vehicles. We make cars more efficient, comfortable and safer. 

This webinar series on X-FAB’s foundry solutions for automotive applications is held in Mandarin language. 

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2022年,整个汽车产业正经历着一个特殊时期:传统油车正逐步向电动化和智能化转变,同时,又遭受着全球疫情的影响和汽车芯片持续短缺的冲击。

X-FAB是一家国际化企业,在德国、法国、马来西亚和美国拥有6个生产基地。它致力于成为模拟世界的代工首选。

而近30年来,X-FAB始终致力于为汽车提供芯片。我们凭借技术和知识产权,能够支持从燃油汽车向电动汽车的转变。我们使汽车更高效、更舒适,更安全,使交通互联成为可能。

参加我们本场汽车主题研讨会,您将会全面了解X-FAB的汽车相关工艺。

Presenter:

Heming Wei, China Marketing Manager, X-FAB Group

Modern medical applications rely on semiconductor technologies to build reliable, accurate and innovative devices. If you want to find out what types of technologies X-FAB provides and for which type of devices they can be used, then watch this webinar session covering the following topics:

  • Feature-rich CMOS technologies for personal medical devices
  • BCD-on-SOI technology for medical ultrasound probes Optical sensors for medical imaging applications
  • Silicon-based microfluidics for next-generation DNA sequencing, liquid biopsy or micro electrode arrays
  • Single-Photon Avalanche Diodes (SPAD) for life-science applications

Presenter:
Christine Dufour, Program Manager Microfluidics
Alexander Zimmer, Principal Engineer Process Development
Dr. Ulrich Bretthauer, Marketing Manager Medical

X-FAB offers for his foundry portfolio Avalanche Photodiodes and Single Photon Avalanche Diode devices for various application
Especially in the field of fluorescence detection a close collaboration with IMMS exists

  • Optimization with respect to the boundary conditions will be elaborated
  • Adjustment of primitive devices for the system optimization
  • Measurement capability for the timing jitter to enable the SPADs for different fluorophores 

The integration of the devices will be supported with different possibilities

  • XH018 optical evaluation chip
  • Application evaluation kit
  • SPAD design library
     

Abstract: Several approaches for close integration of GaN power switches with silicon based CMOS logic are subject of technical evaluations and academic discussions. There is a common motivation for the different integration approaches to position gate driver logic and the power gate as close as possible to reduce parasitics and enhance efficiency. While academic research is and has to be done in all fields further industrial development can only occur within commercially promising areas. Therefore commercial boundary conditions impose economic limits to the usability of the different integration approaches to certain potential approaches. Basic cost estimation models for costs per wafer and costs per chip for different integration approaches are checked with real application driven IC examples.

Highly sensitive UV-Photodiodes integrated in a versatile high voltage capable analogue 0.18 μm CMOS technology have been developed. 

After using lateral DMOS, IGBTs and superjunction devices for Power Integrated Circuits, PICs, integrated power devices based on GaN like High Electron Mobility Transistors, HEMTs, might bring the next step of performance boost for high voltage CMOS technologies. 
The effect of recovery on Negative Bias Temperature Instability (NBTI) measurements had always been a challenge for reliability lifetime estimations. Currently various methods had been developed to suppress this characteristic but being able to completely remove it had been to no avail.
Image sensors are used more and more in daily life, not only in mobile phones, cars and computers, but also in areas such as medical, industrial and scientific applications. There are various challenges in pixel design, and especially so for large 4 transistor pixels which are necessary for high speed applications.
This webinar will give practical suggestions on the design of three- and four transistor pixels. It will provide some tips how to improve the speed of large pixels and generally on how to optimize designs that require large silicon areas. You will also receive information about X-FAB’s newly released 0.18µm process platform XS018 which is optimized for image sensor applications and comes with features such as a pinned photo diode for 4 transistor pixel designs and low dark current.
This paper shows the study of the effect of etch by product towards photoresist residue defect found in Polysilicon-Insulator-Polysilicon (PIP) processes. Initial finding show the correlation with the big size poly PIP capacitor structure. Therefore, the challenge was to focus on big size PIP structure. But during partition check, we found the weakness of the photoresist stripping during O2 plasma ashing.
Hot carrier (HCI) is typical reliability test in qualifying new MOSFET device specified in JEDEC JP001. The tests are normally conducted on wafer level (WLR) using a manual probe station or automatic tester with probe card. Packaged level reliability (PLR) test system is used as well to test the MOSFET device in parallel. PLR allows higher number of samples (device under test, DUT) to be tested within a much shorter time, even applying longer stress time.