SiC DMOSFET Real Wafer Level HTRB and HTGB Evaluation

Abstract — Since 1990s, Silicon Carbide (SiC) was considered as important semiconductor materials for high-power and high temperature applications due to their superior properties compared to silicon. However, evaluating the long-term reliability of SiC devices under extreme conditions remains critical with conventional packaged level testing approach. This paper presents Wafer Level (WL) reliability evaluation results of SiC double implanted metal-oxide semiconductor field-effect transistor (DMOSFET) focusing on High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) testing with threshold voltage monitoring (Vth). The evaluation result has showed 500 sites have been assessed successfully. The works demonstrated true wafer level measurement setup with special probe pins directly touching on probe pads without wafer backgrinding, wafer dicing and ceramic or plastic packaging processes at all.