Multi-technology wafer level integration for RFFE applications

5G/6G requires innovative device technology platforms
 More bandwidth – mmW frequencies
 Higher data rates - linearity to support higher order modulation schemes
 Energy efficiency

GaN offers many attractive characteristics for RF/mmW
 III-V’s offer spec leadership in Ft, Fmax, etc
 However known weakness are low level of integration and cost

Heterogeneous integration of GaN on RF-SOI is pursued by X-FAB in Nano2022
 Transistor level vs functional block level integration
 High performance device integrated on a highly capable Si platform