Ferroelectric HZO Capacitor on CoSi2 Electrode:Exploring CMOS-Compatible Alternative to TiN and W

Abstract - Ferroelectric Capacitors (FeCAPs) based on HfZrO2 (HZO) are promising building blocks for ferroelectric (FE) Non Volatile Memories (NVM). In this work, we investigate for the first time the deposition of FE HZO on top of epitaxial Cobalt Silicide (CoSi2), a mainstream CMOS material. While no systematic studies exist on this combination, our preliminary results demonstrate HZO crystallization on CoSi2 and suggest pathways to improve FE performance toward that of reference stack TiN/HZO/TiN reported in this study and widely used in the literature.