Characteristics of Hetero-Integrated GaN-HEMTs on CMOS Technology by Micro-Transfer-Printing

Published: May 2021

Abstract—This work reports on the progress of the heterointegration of GaN-HEMTs on CMOS wafers by micro-transferprinting (µTP). 200 V and 600 V class device types are successfully transferred from a GaN-on-Si source wafer to a processed CMOS target wafer. Technologies and process steps of the micro-transferprinting are briefly discussed. Both device types are characterized, before micro-transfer-printing on the original Si substrate, and after micro-transfer-printing on the CMOS wafer. The comparison discloses the impact of the micro-transfer-print process on the electrical performance.

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