Benefits and Trade-offs of SOI Designs for Applications up to 200V

Are you challenged with having to design a device that requires bidirectional isolation and has several voltage levels integrated on a single chip without latch-up? If that is the case, you should join our upcoming webinar introducing XT018, the world’s first trench-isolated SOI (silicon on insulator) foundry technology offering for 200V MOS capability at 180nm. The presentation covers the general benefits and trade-offs of using SOI technology vs. a silicon bulk process. It highlights features such as super-junction architecture for 100V to 200V devices with complete dielectric isolation, the possibility to apply defined handle wafer potentials, and a highly flexible modular approach for selecting specific technology features that meet your exact needs.