A 110nm BCD-ON-SOI Technology Offering Best-in-Class Nonvolatile Memory IP for Automotive Application

ABSTRACT
X-FAB's advance 110nm BCD-on-SOI platform technology(XT011) presents two qualified nonvolatile memory intellectual property (NVM IP) macros meeting stringent automotive AEC-Q100 Grade-0 standards. The first IP, XFE, integrates SONOS charge trapping memory for eFlash and EEPROM in a compact macro, boasting a 35.6% size reduction(0.500mm2) compared to its 180nm counterpart(XT018) with equal memory density. The second IP utilizes floating-gate polysilicon storage for a One Time Programmable (OTPF) memory macro. Operating on XT011's low-power 1.5V/5.0V CMOS with Copper BEOL, both IPs demonstrate compliance with automotive and high-temperature environment requirements (-40°C to 175°C), ideal for code and data storage (XFE) and as an optimal trimming solution (OTPF), under harsh operating conditions.