5.9-7.1GHz High-Linearity LNA Using Innovative 3D Device Level Co-Integration of GaN HEMT and RF-SOI

Published: Jun 2021

The heterogeneous integration of RF-SOI and GaN shows high potential. Low power consumption / low noise / high linearity / small area.
High-linearity LNA demonstrator based on an heterogeneous amplifying cell was presented.

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