4T-Pixel CMOS Image Sensors for Enhanced UV Sensing and Lower Readout Noise

Abstract - An improved 4T-Pixel CMOS-Image-Sensor (CIS) is presented, featuring an UV-Window (UVW), a modified Anti-Reflective-Coating (ARC) and Ultra-Low-Noise (ULN) transistors. These are optimizing key parameters such as UV Quantum-Efficiency (QE) and significantly reducing the Read Out-Noise (RON), supporting high-performance imaging in diverse applications. By use of these new features, it is possible to achieve a QE in the UV-Range of 65% with the low Reflective Index (lowRI) ARC and up to 80% with the UVW as well as a RON reduction of more than 50%.