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The reliability of CMOS circuits is influenced by local inhomogeneities in current density, temperature and mechanical stress. Mechanical stress caused by processing and post-processing sources like material mismatch, temperature steps and extrinsic sources like bonding, 3D integration and extended operating conditions becomes more and more relevant the for reliability. It can affect the life time performance of interconnects as well as the function of active devices like stress sensitive transistors.
Advanced applications with higher environmental temperature and higher operating currents, as required in automotive applications for power transistor arrays, are exposed to higher mechanical stress. An optimized layout concept is used to minimize the effective mass flux in the metal interconnections.