CMOS Process Technologies

Name	Process Description	Poly Metal	Core (V)	I\|O (V)	MV\|HV (V)	Opto	NVM	Data Sheet
0.18µm XH018	High performance mixed signal, high temperature, high-voltage and NVM	1P\|6M	1.8	3.3	6\|10\|15\|20\|32\|40\| 45	x	eFlash NVRAM	XH018 Data sheet
0.18µm XC018	High performance analog mixed signal	1P\|6M	1.8	3.3 5.0	-	-	PolyFuse	XC018 Data sheet
0.18µm XP018	Power Management	1P\|6M	1.8 5.0	5.0	13\|15\|25\|30\|40\| 45\|60	-	TrimOTP PolyFuse EEPROM eFlash	XP018 Data sheet
0.18µm XS018	Image Sensor Enabled	1P\|6M	3.3	1.8 3.3	-	-	PolyFuse	XS018 Data sheet
0.25µm 0.25FC	Analog/digital mixed signal baseline	2P\|5M	2.5	3.3 5.0	-	-	eFlash	FC025 Data sheet
0.35µm XH035	High performance, high voltage	2P\|4M	3.3	3.3 5.0	12\|14\|18\|45\|55\| 75\|100	x	ZenerZap HD OTP NV Latch EEPROM CEEPROM	XH035 Data sheet
0.35µm XA035	High temperature analog mixed signal	2P\|4M	3.3	3.3 5.0	12\|14\|18\|45\|55\| 75\|100	-	ZenerZap EEPROM CEEPROM	XA035 Data sheet
0.35µm XO035	High speed opto	2P\|3M	3.3	3.3 5.0	12	x	PolyFuse ZenerZap	XO035 Data sheet
0.35µm XU035	Ultra-High-Voltage	1P\|3M	5.0	5.0	20\|40\|400\|700	-	-	XU035 Data sheet
0.6µm XC06	High performance analog mixed signal	2P\|3M	3.3 5.0	3.3 5.0	8\|12\|40\|60	x	PolyFuse ZenerZap NV Latch EEPROM eFlash	XC06 Data sheet
0.6µm XB06	High precision analog RF and opto process	2P\|3M	3.3 5.0	5.0	12\|30	x	ZenerZap NV Latch EPROM EEPROM	XB06 Data sheet
0.6µm XHB06	High voltage high precision analog RF process	2P\|3M	5.0	3.3 5.0	12\|15\|20\|30	x	ZenerZap NV Latch EPROM	XHB06 Data sheet
0.8µm CX08	Analog mixed signal baseline	2P\|3M	5.0	5.0	40\|60	x	PolyFuse ZenerZap NV Latch EEPROM	CX08 Data sheet
1.0µm XC10	Analog mixed signal baseline	2P\|3M	1.1\|3.3 5.0	5.0	7\|12\|40\|50\|100	x	PolyFuse HD OTP EEPROM	XC10 Data sheet

Legend:

x = Available
- = Not available