CMOS Process Technologies
| Name | Process Description | Poly Metal | Core (V) | I|O (V) | MV|HV (V) | Opto | NVM |
|---|---|---|---|---|---|---|---|
| 0.18µm XH018 | High performance mixed signal, high temperature, high-voltage and NVM | 1P|6M | 1.8 | 3.3 | 6|10|15|20|32|40| 45 | x | eFlash NVRAM |
| 0.18µm XC018 | High performance analog mixed signal | 1P|6M | 1.8 | 3.3 5.0 | - | - | PolyFuse |
| 0.18µm XP018 | Power Management | 1P|6M | 1.8 5.0 | 5.0 | 13|15|25|30|40| 45|60 | - | TrimOTP PolyFuse EEPROM eFlash |
| 0.18µm XS018 | Image Sensor Enabled | 1P|6M | 3.3 | 1.8 3.3 | - | - | PolyFuse |
| 0.25µm 0.25FC | Analog/digital mixed signal baseline | 2P|5M | 2.5 | 3.3 5.0 | - | - | eFlash |
| 0.35µm XH035 | High performance, high voltage | 2P|4M | 3.3 | 3.3 5.0 | 12|14|18|45|55| 75|100 | x | ZenerZap HD OTP NV Latch EEPROM CEEPROM |
| 0.35µm XA035 | High temperature analog mixed signal | 2P|4M | 3.3 | 3.3 5.0 | 12|14|18|45|55| 75|100 | - | ZenerZap EEPROM CEEPROM |
| 0.35µm XO035 | High speed opto | 2P|3M | 3.3 | 3.3 5.0 | 12 | x | PolyFuse ZenerZap |
| 0.35µm XU035 | Ultra-High-Voltage | 1P|3M | 5.0 | 5.0 | 20|40|400|700 | - | - |
| 0.6µm XC06 | High performance analog mixed signal | 2P|3M | 3.3 5.0 | 3.3 5.0 | 8|12|40|60 | x | PolyFuse ZenerZap NV Latch EEPROM eFlash |
| 0.6µm XB06 | High precision analog RF and opto process | 2P|3M | 3.3 5.0 | 5.0 | 12|30 | x | ZenerZap |
0.6µm XHB06 | High voltage high precision analog RF process | 2P|3M | 5.0 | 3.3 5.0 | 12|15|20|30 | x | ZenerZap |
| 0.8µm CX08 | Analog mixed signal baseline | 2P|3M | 5.0 | 5.0 | 40|60 | x | PolyFuse ZenerZap NV Latch EEPROM |
| 1.0µm XC10 | Analog mixed signal baseline | 2P|3M | 1.1|3.3 5.0 | 5.0 | 7|12|40|50|100 | x | PolyFuse HD OTP EEPROM |
Legend:
x = Available
- = Not available