CMOS Process Technologies

Name Process Description Poly Metal Core (V) I|O (V) MV|HV (V) Opto NVM
0.18µm XH018 High performance mixed signal, high temperature, high-voltage and NVM 1P|6M 1.8 3.3 6|10|15|20|32|40|
45
x eFlash
NVRAM
0.18µm
XC018
High performance analog mixed signal 1P|6M 1.8 3.3 5.0 - - PolyFuse
0.18µm XP018 Power Management 1P|6M 1.8
5.0
5.0 13|15|25|30|40|
45|60
- TrimOTP
PolyFuse
EEPROM
eFlash
0.18µm XS018 Image Sensor Enabled 1P|6M 3.3 1.8
3.3
- - PolyFuse
0.25µm
0.25FC
Analog/digital mixed signal baseline 2P|5M 2.5 3.3
5.0
- - eFlash
0.35µm
XH035
High performance, high voltage  2P|4M 3.3 3.3 5.0 12|14|18|45|55|
75|100
x ZenerZap
HD OTP
NV Latch
EEPROM
CEEPROM
0.35µm
XA035
High temperature analog mixed signal 2P|4M 3.3 3.3 5.0 12|14|18|45|55|
75|100
- ZenerZap
EEPROM
CEEPROM
0.35µm
XO035
High speed opto 2P|3M 3.3 3.3
5.0
12 x PolyFuse
ZenerZap
0.35µm
XU035
Ultra-High-Voltage 1P|3M 5.0 5.0 20|40|400|700 - -
0.6µm
XC06
High performance analog mixed signal 2P|3M 3.3
5.0
3.3
5.0
8|12|40|60 x PolyFuse
ZenerZap
NV Latch
EEPROM
eFlash
0.6µm XB06 High precision analog RF and opto process
2P|3M

3.3
5.0

5.0

12|30

x

ZenerZap
NV Latch
EPROM
EEPROM


0.6µm XHB06

High voltage high precision analog RF process

2P|3M

5.0

3.3
5.0

12|15|20|30

x

ZenerZap
NV Latch
EPROM

0.8µm
CX08
Analog mixed signal baseline 2P|3M 5.0 5.0 40|60 x PolyFuse
ZenerZap
NV Latch
EEPROM
1.0µm
XC10
Analog mixed signal baseline 2P|3M 1.1|3.3
5.0
5.0 7|12|40|50|100 x PolyFuse
HD OTP
EEPROM

Legend:

x = Available
- = Not available