Integrated Schottky barrier diodes in RF-SOI

Abstract —Lateral Schottky barrier diodes were implemented in a thin body RF-SOI platform with CoSi2.  Both n-type and p-type device constructions were explored with various geometries and configurations.  Devices were modeled with TCAD, characterized, and their respective performance assessed.  In a demonstration in the targeted application as a zero bias detector, results of output voltage sensitivity to RF input power levels between –20 to 0dBm at frequencies up to 30 GHz are supportive to achieving mmW integrated circuits. 

Keywords — Schottky barrier diode, integrated, RF-SOI, zero bias detector, mmW