1T-1C FeFETs with Separated MFM Module: Impact of Ferroelectric Stack on Device Performance

Abstract— The hafnium oxide based FeFET has attracted much attention due to its good scalability, high operating speed, and low power consumption. However, the integration of this device into CMOS technologies faces several challenges. Recently, the 1T1C FeFET concept with one transistor (1T) and a separate ferroelectric capacitor (1C) in the BEoL has been introduced. This new approach can be integrated into standard process technologies without significant changes at the transistor level. Herein, various stacks and integration schemes are investigated to optimize the BEoL MFM module. The impact of these stacks on key performance parameters of the BEoL MFM module, the 1T1C single-bit memory cell, and an 8 kbit test array is discussed.