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Abstract
This paper provides a concise overview of X-FAB and the power electronics markets, with a specific focus on the wide bandgap semiconductors Silicon Carbide (SiC) and Gallium Nitride (GaN). The potential advantages of using power electronics for achieving carbon neutrality will also be discussed. Additionally, the challenges associated with integrating SiC and GaN into a CMOS manufacturing process will be presented. Finally, the paper concludes by offering an outlook on X-FAB's technology strategy for power electronics.
The thinning of GaN wafers is especially delicate as the stabilizing Silicon is removed from already fragile wafers while applying mechanical stress. Two wafers broke not immediately during grinding but while handling afterwards. Currently, a backside process with thicker GaN wafers is being explored additionally.