IP Portal

The intellectual partner network

The intellectual partner (IP) portal is a web database provided by X-FAB in cooperation with selected partners. Both X-FAB and a variety of different IP supplier offer their IP to customers using X-FAB’s foundry process. We will support customers to get in direct contact with the relevant IP supplier.

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906 entries found



Geometry Process Supply Voltage IP Category Deliverable Description IP Provider
180 nm
XP018
5V
Bandgaps
IP cell abgpc08_5v included in Analog Library A_CELLS_5V Bandgap reference with second-order curvature correction. X-FAB
180 nm
XT018
5V
Bandgaps
IP cell abgpc08_5v included in Analog Library A_CELLS_5V Bandgap reference with curvature compensation and polysilicon resistors. X-FAB
350 nm
XH035
3.3V
Bandgaps
IP cell abgpc09 included in Analog Library A_CELLS_3V3 Low-voltage bandgap reference with N-well resistors. X-FAB
350 nm
XH035
5V
Bandgaps
IP cell abgpc10 included in Analog Library A_CELLS_HV Middle-voltage bandgap reference with N+ HRES Polysilicon resistors. X-FAB
180 nm
XT018
5V
Bandgaps
IP cell abgpc10_5v included in Analog Library A_CELLS_5V Bandgap reference with curvature compensation and polysilicon resistors. X-FAB
180 nm
XP018
5V
Bandgaps
IP cell abgpc10_5v included in Analog Library A_CELLS_5V Low supply voltage bandgap reference with second-order curvature correction. X-FAB
350 nm
XH035
3.3V
Bandgaps
IP cell abgpc11 included in Analog Library A_CELLS_3V3 Low-voltage, low-power bandgap reference with N-well resistors. X-FAB
0.60 µm
XC06
5V
Bias
IP cell abiac01 included in Analog Library A_CELLS_5V General purpose low-current bias cell. It forces a current of apprx. 200nA through P- or N-MOS with W/L ratio of 10µm/12µm. X-FAB
0.60 µm
XT06
5V
Bias
IP cell abiac01 included in Analog Library A_CELLS_5V General purpose low-current bias cell. The circuit forces a current of 200nA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/12µm. X-FAB
0.60 µm
XB06
5V
Bias
IP cell abiac01 included in Analog Library A_CELLS_5V Bias voltage source for pmos and nmos transistors. X-FAB
350 nm
XH035
3.3V
Bias
IP cell abiac01 included in Analog Library A_CELLS_3V3 General purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 6µm/6µm and NMOS with W/L ration of 6µm/6µm. X-FAB
180 nm
XS018
3.3V
Bias
IP cell abiac01_3v3 included in Analog Library and A_CELLS_3V3 General purpose bias cell. The circuit force a current of 200nA to flow through PMOS with W/L ratio of 8µm/10µm and NMOS with W/L ratio of 4µm/20µm. X-FAB
180 nm
XP018
5V
Bias
IP cell abiac01_5v included in Analog Library A_CELLS_5V General purpose bias cell.The circuit forces a current of ~2µA to flow through PMOS with W/L ratio of 10µm/6µm and NMOS with W/L ratio of 10µm/12µm. X-FAB
180 nm
XT018
5V
Bias
IP cell abiac01_5v included in Analog Library A_CELLS_5V IPTAT bias cell. It forces a current of 2µA to flow through PMOS with W/L ratio of 12µm/6µm and NMOS with W/L ratio of 10µm/12µm X-FAB
1.00 µm
XDH10
5V
Bias
IP cell abiac02 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of 2µA to flow through PMOS with W/L ratio of 10µm/8µm and NMOS with W/L ratio of 10µm/12µm. X-FAB
1.00 µm
XDM10
5V
Bias
IP cell abiac02 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of 2µA to flow through PMOS with W/L ratio of 10µm/8µm and NMOS with W/L ratio of 10µm/12µm. X-FAB
350 nm
XH035
3.3V
Bias
IP cell abiac02 included in Analog Library A_CELLS_3V3 General purpose VTH-based bias cell. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 6µm/6µm and NMOS with W/L ratio of 6µm/6µm. X-FAB
0.60 µm
XC06
5V
Bias
IP cell abiac02 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of apprx. 2µA through P- or N-MOS with W/L ratio of 10µm/10µm. X-FAB
0.60 µm
XT06
5V
Bias
IP cell abiac02 included in Analog Library A_CELLS_5V General purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/10µm. X-FAB
0.60 µm
XB06
5V
Bias
IP cell abiac02 included in Analog Library A_CELLS_5V Bias voltage source for pmos and nmos transistors. X-FAB
180 nm
XS018
3.3V
Bias
IP cell abiac02_3v3 included in Analog Library and A_CELLS_3V3 General purpose bias cell. The circuit force a current of 2µA to flow through PMOS with W/L ratio of 10µm/4µm and NMOS with W/L ratio of 6µm/12µm. X-FAB
180 nm
XP018
5V
Bias
IP cell abiac02_5v included in Analog Library A_CELLS_5V General purpose bias cell.The circuit forces a current of ~10µA to flow through PMOS with W/L ratio of 2x12µm/3µm and NMOS with W/L ratio of 2x5µm/4µm. X-FAB
0.60 µm
XT06
5V
Bias
IP cell abiac03 included in Analog Library A_CELLS_5V General purpose bias cell. The circuit forces a current of10µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/6µm. X-FAB
350 nm
XH035
3.3V
Bias
IP cell abiac03 included in Analog Library A_CELLS_3V3 General purpose weak inversion bias cell. The circuit forces a current of 200nA (approx.) to flow through PMOS with W/L ratio of 6µm/12µm and NMOS with W/L ratio of 6µm/20µm. X-FAB
0.60 µm
XC06
5V
Bias
IP cell abiac03 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of apprx. 10µA through P- or N-MOS with W/L ratio of 10µm/6µm. X-FAB
0.60 µm
XB06
5V
Bias
IP cell abiac03 included in Analog Library A_CELLS_5V Bias voltage source for pmos and nmos transistors. X-FAB
180 nm
XS018
3.3V
Bias
IP cell abiac03_3v3 included in Analog Library and A_CELLS_3V3 General purpose bias cell. The circuit force a current of 10µA to flow through PMOS with W/L ratio of 2*12µm/2µm and NMOS with W/L ratio of 14µm/6µm. X-FAB
1.00 µm
XDH10
5V
Bias
IP cell abiac04 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of 10µA to flow through PMOS with W/L ratio of 12µm/4µm and NMOS with W/L ratio of 12µm/6µm. X-FAB
350 nm
XH035
12V
Bias
IP cell abiac04 included in Analog Library A_CELLS_HV High voltage bias cell. The circuit forces a current of 2µA (approx.) to flow through PHV with W/L ratio of 8µm/12µm and NHV with W/L ratio of 8µm/14µm. X-FAB
1.00 µm
XDM10
5V
Bias
IP cell abiac04 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of 10µA to flow through PMOS with W/L ratio of 12µm/4µm and NMOS with W/L ratio of 12µm/6µm. X-FAB
 

   MP = Mass ProductionPT = Prototyping, Silicon provenID = in DesignVS = Verified by Simulations (Soft-IP)

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*Disclaimer:
The Intellectual Partner Network is a web database provided by X-FAB in cooperation with selected partners. Both X-FAB and a variety of different IP supplier offer their IP to customers using X-FAB’s foundry process. X-FAB will support customers to get in direct contact with the relevant IP supplier.

X-FAB will take no responsibility nor any liability whatsoever for the information or products offered or provided by the other IP suppliers at the database of the Intellectual Partner Network. X-FAB shall have no liability towards the customers for any use of and/or reliance of the products provided by the other IP suppliers at the database of the Intellectual Partner Network.

X-FAB's own IP is subject to a license agreement. X-FAB IP marked with “*” are part of the Master Kit or Master Kit Plus library. If you can not find the IP you are looking for, please contact the respective sales manager in your region. We continuously extend our libraries and offer a custom cell development service as well.