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The ResourceXplorer enables you to access technical papers, webinars and articles related to analog/mixed-signal semiconductor technologies.
318 entries found
Crystallized-shaped defect was detected after MIM (Metal-Insulator-Metal) Etch post clean step & the defect was found at the edge of MIM structure. The Energy-dispersive X-ray spectroscopy (EDX) analysis showed that the defect is fluorine contaminant after MIM Etch post cleaning step due to long delayed (>5hours).
This paper focus on optimizing Bosch Deep Trench Isolation (DTI) recipe, in order to eliminate silicon grass formation at Shallow Trench Isolation (STI) topology structure. The effectiveness of each etching parameters optimization towards silicon grass elimination has been studied. Silicon grass was observed at STI topology structure after Octaflurocyclobutane (C4F8) gas was added into etching step.
In view of reducing the process development cycle times with plausible time-to-market goals, it is of great demands to speed up the assessment pace, but at the same time not to jeopardize for the high level of quality requirements. Highly robust designs and process margins are the key differentiators and should be enforced in particular for the automotive markets. In this work, development of the fast wafer-level reliability (FWLR) `pulsed' tests that are performed in a relatively short time span under highly accelerated stress conditions on the standard parametric test station (PCM) is revealed here. This is incredibly useful and saving a lot of time especially for compact DOE analysis.
X-FAB platforms provide a complete choice of design libraries, design tools and primitive devices supporting ULP/ULL solutions both at elementary and at sub-system level, for best-in-class power management.
A standardised approach to characterising low-frequency noise for semiconductor devices is presented in this paper. The purpose of this measurement technique is to easily compare performances of different devices from different technologies in order to develop high-precision low-noise technology.
Advanced applications with higher environmental temperature and higher operating currents, as required in automotive applications for power transistor arrays, are exposed to higher mechanical stress. An optimized layout concept is used to minimize the effective mass flux in the metal interconnections.
Since MEMS systems get more and more complex their design needs accurate consideration of the worst-case conditions. This paper introduces a realistic worst-case characterization from IC design to the MEMS manufacturing process.
Ultrasound solutions are widely used in industrial and medical applications for distance measurements and imaging. A multiplexing switch unit is required to drive a piezoelectric transducer array for imaging by a single ultrasound pulse source. Higher frequencies are required for better image resolution.
- self heating effect influences electrical characteristic of HV devices
- HCO performance strong temperature dependent
The demand for miniaturized CMOS and MEMS sensors with high performance has increased significantly in the last years. In addition to MEMS / CMOS processing, advanced technologies are required for wafer level packaging and heterogeneous system integration for achieving the needed sensor performance as well as packaging requirements. Different technologies have been developed in microelectronic and also MEMS industry and are described in literature.