Find our technical papers, webinars, articles
The ResourceXplorer enables you to access technical papers, webinars and articles related to analog/mixed-signal semiconductor technologies.
327 entries found
Be aware of the avalanche! Are you planning to integrate Avalanche Photodiodes (APD) or Single Photon Avalanche Diodes (SPAD) into your next IC design? If yes, you should watch this webinar replay. It will cover X-FAB's new APD/SPAD devices which come with a high photon detection probability of up to 18% for 850 nm wavelength and a low dark count rate. You will also learn about the integrated trigger diode which allows precise, real-time on-chip breakdown voltage detection without an external light source.
X-FAB has been providing photodiodes for more than 20 years. In this webinar we are proud to introduce our new core process optimized for photodiodes. This has been developed based on the feedback and requests from you - our customers. The technology comes with a number of photodiodes with outstanding performance for UV, ambient and near-infrared light. It also offers a range of other devices to enable fully integrated low-noise sensor designs.
µTP is a novel technology for 3D and heterogenous integration.
Mass transfer and high placement accuracy are supported.
Devices/ ASICs of minimal dimensions can be integrated.
Various applications can benefit from the integration approach.
X-FAB‘s micro-transfer-printing activities were funded within several European and German projects realized by
ECSEL Joint Undertaking and the BMBF.
Is it worth to talk about the device characterization of breakdown voltage?
It should be a simple number extracted from a IV -curve
CMOS foundry point of view but there is more behind them
Most important parameter to monitor the CMOS process
Shift in the breakdown voltage refer to issues in the process
Therefore, the methodology how to extract the breakdown voltage or even the IV-curve is essential
By choosing the “AVLA” process module in XH018
Enable the primitive device of avalanche photodiode and single photon avalanche diode
Necessity to monitor the process for both devices
Integration concept of GaN on SOI has been validated
- Possible to integrate GaN HEMT on a SOI circuit
- The HEMT is still functional after process
Vertical coupling decreased thanks to the buried oxide
- However, unexpected increase in Coff has been observed
To our knowledge, this is the first time that this heterogeneous integration technique is used for RF applications
(Webinar is presented in Mandarin)
More complex designs, shorter time to market and less time for engineering – these are the challenges IC designers are facing today. X-FAB will be addressing these topics to assist you in your design process and to support you to achieve First-Time-Right designs.
- Micro-Transfer-Printing (µTP) was introduced as a new and promising technology for 3D- and heterogeneous integration.
- The main advantage of µTP is the parallel placement of up to thousands of small chiplets with a very high printing accuracy.
Partial SOI (PSOI) is revisited as a suitable High Voltage (HV) architecture for Power Integrated Circuits (PICs). The added process complexity compared to SOI RESURF is offset by the better heat conduction due to thinner BOX, the wider voltage range capability and the reduced parasitic capacitance to the Handle Wafer (HW). The new proposed platform technology is therefore particularly relevant to the manufacturing of high voltage integrated circuits (HVICs) where low Ron, fast switching and reduced self-heating are essential. This work reports on the extension of a 200V PSOI process to 400V while providing competitive Ron and low HCI degradation.
Wetten, du bist uns schon einmal begegnet? Ob beim Entsperren des Smartphones, in deinem Auto oder Zuhause: X-FAB steckt überall da, wo die analoge und digitale Welt zusammentreffen. Mikrochips made by X-FAB findest du in Smart Watches, Herzschrittmachern, Industrierobotern, Elektroautos, Herzschrittmachern, und vielem mehr.
Als sogenannte Foundry fertigen wir analog-digitale integrierte Schaltkreise auf Siliziumwafern im Kundenauftrag. Mit circa 100.000 Wafer-Starts pro Monat sind wir mit unseren sechs Standorten auf drei Kontinenten und rund 4.000 MitarbeiterInnen einer der weltweit führenden Spezial-Halbleiterhersteller.