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The ResourceXplorer enables you to access technical papers, webinars and articles related to analog/mixed-signal semiconductor technologies.
324 entries found
A standardised approach to characterising low-frequency noise for semiconductor devices is presented in this paper. The purpose of this measurement technique is to easily compare performances of different devices from different technologies in order to develop high-precision low-noise technology.
Advanced applications with higher environmental temperature and higher operating currents, as required in automotive applications for power transistor arrays, are exposed to higher mechanical stress. An optimized layout concept is used to minimize the effective mass flux in the metal interconnections.
Since MEMS systems get more and more complex their design needs accurate consideration of the worst-case conditions. This paper introduces a realistic worst-case characterization from IC design to the MEMS manufacturing process.
Ultrasound solutions are widely used in industrial and medical applications for distance measurements and imaging. A multiplexing switch unit is required to drive a piezoelectric transducer array for imaging by a single ultrasound pulse source. Higher frequencies are required for better image resolution.
- self heating effect influences electrical characteristic of HV devices
- HCO performance strong temperature dependent
The demand for miniaturized CMOS and MEMS sensors with high performance has increased significantly in the last years. In addition to MEMS / CMOS processing, advanced technologies are required for wafer level packaging and heterogeneous system integration for achieving the needed sensor performance as well as packaging requirements. Different technologies have been developed in microelectronic and also MEMS industry and are described in literature.
Thermal investigations of heterogeneously integrated GaN HEMTs on Si-CMOS by micro-Transfer-Printing
Automotive analog ICs are required to function without incidents over the expected product lifetime of 10 years and longer. This may equally apply to industrial and medical designs. While the goal of achieving zero incidences is the same, the actual operating conditions such as bias conditions and duty cycles, can vary considerably. The hot carrier injection (HCI) lifetime of high-voltage transistors is one of the critical areas that need to be considered.
X-FAB offers a suite of readily available process reliability documentation and support information including comprehensive Safe Operating Area (SOA) characterization to help you on your path towards achieving first-time-right designs. This webinar will provide an overview of the HCI reliability related material available for the 40 V and 60 V transistors of X-FAB’s 180 nm high-voltage SOI process (XT018). This is followed by a step-by-step guide of how to effectively utilize the given information to gauge the HCI lifetime based on a circuit example.