Our avalanche photodiodes (APDs) and single-photon avalanche diodes (SPADs) can be used in consumer, automotive and medical applications. APDs and SPADs are part of our highly modular, automotive qualified process XH018 and completely integrated in the design kit. 

We offer primitive devices for our APD in linear mode which are scalable from 30 µm to 200 µm, and for our SPAD in Geiger mode with sizes from 10 µm to 30 µm. Models for optical and electrical simulation, along with a specific application note, help to easily integrate these devices into your IC.

Our SPADs feature a high photon detection probability over a wide wavelength range and an excellent low dark count rate. A short dead time lower than 3 ns results in a high bandwidth. 
 

Our gas and flow sensors are based on our well-established noble-metal processes, especially the platinum metallization process. The advantage of using MEMS processes for these types of sensors is that the resulting sensors are very small, while still offering the performance of currently available medical or industrial sensors. This enables a wide range of applications that cannot be addressed so far using conventional gas or flow sensors. Together with backside etching (dry or wet), the platinum metallization process allows the technologies required to manufacture our MEMS gas and flow sensors. The operating principle relies on a heated platinum structure, whose reaction with the environment results in an electrical signal that can be used for direct or indirect flow or gas sensing.

Unlike the small-sized four-transistor pixels used in consumer products such as mobile phones and digital cameras, our XS018 technology is the first to support the large high-speed pixels required for medical and scientific applications such as computer tomography and X-ray scanners for 3D images. 

The XS018 process supports pixel sizes up to 200 µm x 200 µm with high-speed reading capability. XS018 has a 3.3 V core that results in a very low mask count, reducing costs when 1.8 V devices are not necessary. Optionally, it can be extended for higher integration by using a 1.8 V module. 

Our four-transistor pixel cells with pinned photodiodes offer low dark current and low noise. The pinned photodiode available with four different pinning voltages and a 3.3 V n-channel MOS transistor with five different options for low-threshold voltages can be used as source follower, reset device or row select device in the pixel, making it easier for designers to find the right device for their applications. If your design doesn’t fit the maximum reticle size, our stitching capabilities for large dies could help you.

Our inertial sensor offering covers both accelerometers and gyroscopes in the X,Y and Z axes. All of them satisfy automotive quality standards, ensuring that our customers are supplied with well-functioning devices that meet their requirements.
The sensing is enabled through the movement or bending of robust single-crystalline silicon structures in the X, Y and Z planes, suspended within in a sealed cavity. The silicon sensing features are formed using a dry etching process, while low stiction of moving parts is achieved through a well-controlled and engineered release process. Furthermore, our trench-filled isolation technology provides low parasitic capacitance. We achieve hermetically sealed devices with well-established wafer-level packaging processes, allowing customers to select a range of cavity pressures. Depending on the accuracy and sensitivity required, inertial sensors can be based on either SOI or bulk silicon technology. 
 

Our characterized photodiodes are integrated in modular process platforms and can be combined with dozens of other technology modules using high-running reliable processes with internal second source. The photodiodes span the entire wavelength spectrum optimized for UV, visible and near-infrared light. Our latest generation offers the industry’s highest UV-responsivity for integrated photodiodes. The quantum efficiency for visible light is higher than 90%.

They are part of our process design kits and can be implemented as sensor elements like any other electrical device.  Our models enable the simulation of electrical and optical parameters.  Specific application notes as well as our unique support in photodiode matching, will help you to optimize your optical sensor design.

Integrated photodiodes are available in our 180 nm technologies XS018, XH018 and our 350 nm technology XO035. Special support for optical sensors, like optical window etching and antireflective coating, is also available in several other processes.

We have been manufacturing MEMS pressure sensors for over 25 years, which reflects our mature offering and expertise in this field. Our pressure sensor technology includes relative and absolute pressure sensors using a wide range of processes, enabling us to provide a complete range of pressure sensors for any automotive, industrial and medical applications.
Our sensing elements are based on piezo sensitive implants and wet or dry backside etching to free up the actual membrane structures. To accommodate different pressure ranges and sensitivities, we offer membranes made out of bulk, EPI or SOI silicon wafers. Our processes provide pressure sensors for all kinds of media including corrosive and high temperature environments required for some automotive applications. This is to ensure compliance with the latest and strictest environmental legislation requirements. 
 
 

Our infrared sensors are based on the thermopile principle. Depending on the customer design, these can be single- or multiple-pixel thermopiles. The advantage of our temperature sensors is that they can provide medical-grade and contactless measurements, which is especially important in the current COVID-19 era. The wafer process to manufacture these thermopiles requires a well-controlled wet etching process to ensure that the appropriate sensitivities and functionality can be achieved. X-FAB offers both discrete and integrated solutions based on the XH035 CMOS technology. Despite increasing the complexity of the overall technology, the integrated solution provides great advantages as the device size can be significantly reduced.