ResourceXplorer

Find our technical papers, webinars, articles

The ResourceXplorer enables you to access technical papers, webinars and articles related to analog/mixed-signal semiconductor technologies.



308 entries found



The 110 nm BCD-on-SOI technology platform (XT011) is the latest evolution of X-FAB's foundry offering, continuing the tradition of best-in-class offer for high-voltage automotive, industrial and medical applications.
The core platform leverages a competitive portfolio of digital libraries and non-volatile memory IP to be released throughout 2024, which, coupled with X-FAB’s high standards of design support, will enable first-time right success for your next-generation products.
In this webinar, X-FAB will present a first overview of the technology, available design solutions, support and release schedule, providing an initial introduction to the enhanced capabilities and benefits of this offer for their product roadmap.

Presenters:

Nando Basile, Technical Marketing Manager e-NVM
Lars Bergmann, Director Design Support
Zhenkun Chen, Program Leader XT011

Abstract— The hafnium oxide based FeFET has attracted much attention due to its good scalability, high operating speed, and low power consumption. However, the integration of this device into CMOS technologies faces several challenges. Recently, the 1T1C FeFET concept with one transistor (1T) and a separate ferroelectric capacitor (1C) in the BEoL has been introduced. This new approach can be integrated into standard process technologies without significant changes at the transistor level. Herein, various stacks and integration schemes are investigated to optimize the BEoL MFM module. The impact of these stacks on key performance parameters of the BEoL MFM module, the 1T1C single-bit memory cell, and an 8 kbit test array is discussed.

Abstract—Timing jitter is one of the most important characteristics of single-photon avalanche diodes (SPADs), especially in applications requiring accurate photon timing, such as timecorrelated single photon counting (TCSPC) or LiDAR. In this article, we describe a measurement setup for the characterization of the timing jitter of actively-quenched SPADs using the TCSPC technique with a picosecond laser. By also describing the typical mistakes and potential pitfalls with such a setup, we aim to give a useful guideline on reproducing a setup with well-defined measurement uncertainty, in order to achieve comparable results
between devices of different manufacturers, both academic and commercial. In addition, we describe the physical cause of the jitter in SPADs to aid designers in the design of a new generation of low-jitter SPAD devices.

Abstract—This paper, presents a physically-based matching model that includes mismatch fluctuations in HiSIM_HV MOSFET model. Analytical expressions of the variation associated to the threshold voltage, current factor, and drift region resistor were developed and added to the compact model. The proposed model predicts accurately the mismatch in the drain current over a wide operating range and uses only three model parameters. This was validated through Monte Carlo simulations compared to experimental measurements on several device classes from X-FAB 0.18 um processes. The results of the drain current mismatch, the standard deviation of threshold voltage, and the standard deviation of the current factor are presented here and show good agreement between measurements and simulations.

Abstract —Lateral Schottky barrier diodes were implemented in a thin body RF-SOI platform with CoSi2.  Both n-type and p-type device constructions were explored with various geometries and configurations.  Devices were modeled with TCAD, characterized, and their respective performance assessed.  In a demonstration in the targeted application as a zero bias detector, results of output voltage sensitivity to RF input power levels between –20 to 0dBm at frequencies up to 30 GHz are supportive to achieving mmW integrated circuits. 

Keywords — Schottky barrier diode, integrated, RF-SOI, zero bias detector, mmW
 

Abstract
This paper provides a concise overview of X-FAB and the power electronics markets, with a specific focus on the wide bandgap semiconductors Silicon Carbide (SiC) and Gallium Nitride (GaN). The potential advantages of using power electronics for achieving carbon neutrality will also be discussed. Additionally, the challenges associated with integrating SiC and GaN into a CMOS manufacturing process will be presented. Finally, the paper concludes by offering an outlook on X-FAB's technology strategy for power electronics.

Silicon-based microfluidic systems

✓ Micro-manufactured fluidic structures for chip-scale handling and analysis of small quantities of fluids (liquids & gases)
✓ With noble metal electrodes integrated on silicon ASICs, as electro-chemical transducer interface, ready to be biofunctionalized for customized applications
✓ Using silicon technology: high integration density, stable and reproducible manufacturing process

Abstract—This paper presents the Radio Frequency (RF) circuit design and characterization of a Single Pole Double Throw (SPDT) switch. The switch is realized in a Gallium Nitride (GaN)/RF-SOI heterogeneous technology using “Micro-transferprinting”. The measured insertion loss and isolation are respectively below 0.65 dB and -12.7 dB up to 6 GHz. The large signal characterization using a continuous wave shows a hard breakdown at 36 dBm. On the other hand, the pulsed large signal measurement shows a 1dB input compression point of 48 dBm which meets the targeted value. This result confirms that the hard breakdown in CW is due to heat accumulation in the GaN. To address this issue, a heat evacuation technique for future hardware iteration is proposed. This heat evacuation technique should allow to achieve a CP1 of 48 dBm. And so, fully benefit from the advantages from both GaN and RF-SOI technologies on the same chip. 

Keywords—GaN, RF-SOI, Heterogeneous technology, Switch.

Full physical 3D TCAD are often limited to smaller geometries. As the simulation domain increases in size an emulation approach is often taken with lower accuracy [1]. The 375V partial SOI LDNMOS is a large device with a complex, high aspect ratio, multi-region deep trench isolation (DTI) termination structure combined with the HW diode. Additionally, the device has a multitude of small floating silicon regions and a significant amount of silicon/oxide interfaces, coupled with floating field plates. As such, a complete 3D simulation was impossible. A new methodology of domain decomposition using Silvaco’s Victory 3D TCAD [3] has been introduced. The device is broken down into several elements, small enough to enable usage of Monte Carlo Implantation and physical annealing models. After the process simulation, the elements are then joined and re-meshed for device simulation.

Making chips for automotive has been X-FAB’s core business for about 30 years. With our technologies and IP, we support the transition from combustion engines to electrical vehicles. We make cars more efficient, comfortable and safer. 

This webinar series on X-FAB’s foundry solutions for automotive applications is held in Mandarin language. 

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2022年,整个汽车产业正经历着一个特殊时期:传统油车正逐步向电动化和智能化转变,同时,又遭受着全球疫情的影响和汽车芯片持续短缺的冲击。

X-FAB是一家国际化企业,在德国、法国、马来西亚和美国拥有6个生产基地。它致力于成为模拟世界的代工首选。

而近30年来,X-FAB始终致力于为汽车提供芯片。我们凭借技术和知识产权,能够支持从燃油汽车向电动汽车的转变。我们使汽车更高效、更舒适,更安全,使交通互联成为可能。

参加我们本场汽车主题研讨会,您将会全面了解X-FAB的汽车相关工艺。

Presenter:

Heming Wei, China Marketing Manager, X-FAB Group