284 entries
Published: Jan 2017

This paper presents the design and experimental characterization of a microfluidic system comprising a novel bi-phasic liquid combination actuated by EWOD (electrowetting-on-dielectrics).


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Published: Dec 2016

Next the paper highlights one particular methodology of subduing NBTI recovery impact in NBTI investigation which is the minimization of measurement system delays. A comparison was done in between conventional and fast NBTI measurement systems to demonstrate the severity of system delays and recovery. Lastly Fast Wafer Level Reliability (FWLR) NBTI was also included as a reference and contrast from a non-measurement system related approach.


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Published: Nov 2016

An increasing number of applications such as automotive engine management require electronic systems which operate reliably at temperatures above 150°C. Designers are facing the challenges of dealing with changes in electrical characteristics, higher leakage current and thermally accelerated degradation.This webinar looks at the device physics, electrical properties of MOSFETs and NVMs, and degradation mechanisms at elevated temperatures up to 200°C.


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Published: Oct 2016

The best performance of a semiconductor component will not necessarily lead to success if it cannot be manufactured with a suitable quality. In order to achieve highest quality at reasonable costs, very challenging solutions need to be developed and integrated into semiconductor technologies. To enable advanced analog/mixed-signal products for a safe application in harsh environments such as automotive or avionics and for consumer markets, built-in robustness is paramount. The webinar will show the requirements, solutions and consequences for X-FAB’s semiconductor manufacturing processes and their architecture. Important aspects such as process and primitive device selection, process capability, primitive device reliability and chip-package interaction will be addressed. Finally, guidelines for the development and qualification of robust products and a safe launch process will be presented.


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Published: Sep 2016

In this study, the effect of several SiNx deposition parameters on the dielectric TDDB performance of SiNx MIM capacitors has been studied: silane (SiH4) gas flow rate, RF power and ammonia (NH3) gas flow rate. The constant voltage TDDB lifetime performances for different conditions were compared and discussed for MIM capacitor optimization and the mechanism behind the effect was discussed.


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Published: Sep 2016

The developed so called highly robust metallization is optimized for applications with extended operating conditions regarding higher currents and temperatures as well as mechanical stress. Donut-Vias are elements of the highly robust metallization for the interconnection of highly robust metal lines. The paper shows the layout of a Donut-Via and explains the benefits and limits of the new layout by simulation and test results.


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Published: Sep 2016

 In the current paper, the formation of voids induced by repetitive thermal loads has been assessed and evaluated semi-destructively by employing Scanning Acoustic GHz-Microscopy. Prior to the acoustic inspection, sophisticated semi-destructive preparation was required to provide access to the region of interest. Voids with sizes below the acoustic resolution limit have been detected. The relative number and the size of appearance have been analysed using a custom made analysis software tool.


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