0.18 Micron Modular Trench Isolated SOI CMOS Technology
The XT018 series is X-FAB’s 0.18-micron Modular High-voltage SOI CMOS Technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and those of a state-of-the-art six metal layers 0.18-micron process. High voltage support up to 200V combined with range of Non-Volatile-Memory options. The XT018 platform is specifically designed for a next generation automotive, industrial and medical applications operating in the temperature range of -40 to 175 °C.
Full PDK support for major EDA vendors, extensive device characterization and modeling, comprehensive analog, digital, and memory IPs.
Available Modules
- Trench SOI 0.18µm CMOS low-power 1.8/5.0V, or 5.0V only core module (1P2M)
- Handle wafer contact Module
- N-buried Module
- Deep Trench Isolation Module
- Deep P-well / N-well Modules
- 1X super-junction NDMOS / PDMOS Modules
- DNC / DPC Modules
- Sub-Block Module
- High/Medium Resistance Polysilicon Modules
- 1.8V Low VT Module
- Bipolar Modules
- HV Depletion Module
- N Buffer Module
- High Voltage NMOS / PMOS Modules
- various Diode Modules
- Single / Double / Triple MIM Capacitor Modules
- High Capacitance Single / Double / Triple MIM Capacitor Modules
- Non-volatile Memory Modules
- Bottom Dielectric Module
- Flat Passivation Module
- 3 / 4 / 5 Metals Layer Modules
- Top Metal Module
- Thick Metal Module
- Polyimide Module