0.18 Micron Modular Trench Isolated SOI CMOS Technology

The XT018 series is X-FAB’s 0.18-micron Modular High-voltage SOI CMOS Technology. It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and those of a state-of-the-art six metal layers 0.18-micron process. High voltage support up to 200V combined with range of Non-Volatile-Memory options. The XT018 platform is specifically designed for a next generation automotive, industrial and medical applications operating in the temperature range of -40 to 175 °C.
Full PDK support for major EDA vendors, extensive device characterization and modeling, comprehensive analog, digital, and memory IPs.

XT018 Data sheet

• Trench SOI 0.18µm CMOS low-power 1.8/5.0V, or 5.0V only core module (1P2M)
• Handle wafer contact Module
• N-buried Module
• Deep Trench Isolation Module
• Deep P-well / N-well Modules
• 1X super-junction NDMOS / PDMOS Modules
• DNC / DPC Modules
• Sub-Block Module
• High/Medium Resistance Polysilicon Modules
• 1.8V Low VT Module
• Bipolar Modules
• HV Depletion Module
• N Buffer Module
• High Voltage NMOS / PMOS Modules
• various Diode Modules
• Single / Double / Triple MIM Capacitor Modules
• High Capacitance Single / Double / Triple MIM Capacitor Modules
• Non-volatile Memory Modules
• Bottom Dielectric Module
• Flat Passivation Module
• 3 / 4 / 5 Metals Layer Modules
• Top Metal Module
• Thick Metal Module
• Polyimide Module