273 entries
Published: Oct 2012

This Inter-poly Oxide-Nitride-Oxide (ONO) dielectric film has been widely used as dielectric films in stacked gate Flash memory devices. The ONO dielectric film plays an important role in ensuring good reliability in flash memory devices. In this paper, the characteristics of ONO dielectric films have been analyzed.


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Published: Nov 2017

The shift of the threshold voltage (Uth) in high voltage metal-oxide-semiconductor field effect transistors (n-MOSFET) with source and drain regions created by an As-implantation with different implanters was investigated. By analyzing the capacitance-voltage curves recorded in metal-oxide-semiconductor structures with different thicknesses of SiO2 and different shapes we found that the shift of Uth in the n-MOSFETs was correlated with the presence of implantation induced defects in the gate oxide. These defects were stable even after the heat treatments at about 1200 K and they appeared in SiO2 due to different pressures in the implantation chamber and different types of gas.


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Published: Sep 2012

Reliability tests assessment are used to evaluate the quality of different process schemes of MIM capacitors. Typically, VRAMP tests can be used to check for extrinsics; which are common and popular method used for evaluating yield issues and early life failures (in which the product failures in ppm level); while TDDB tests are used to determine the intrinsic quality of the capacitor dielectrics; thus the lifetime will be extrapolated accordingly from its dependency from accelerated tests at different higher stress conditions down to the corresponding use condition.


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Published: Nov 2017

Tomorrows integrated power electronic systems require more efficient power conversion solutions at lower costs.


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Published: Jun 2012

This paper demonstrates and discusses novel “three dimensional” silicon based junction isolation/termination solutions suitable for high density ultra-low-resistance Lateral Super-Junction structures.


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Published: Apr 2012

Inline defect control systems are used across the semiconductor industry for detection of process failures like equipment issues or yield problems. Besides to the goal to improve the yield of each process, it may have a negative influence on factory performance as well. The measurement of all lots in all defect control monitors of a process is not feasible, even when there are bottleneck situations.


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Published: Apr 2012

In a typical ASIC semiconductor facility, there are hundreds of products processed on dozens of different equipments with unequal characteristics. Sequence depended equipment setups, failures, preventive maintenance and product specific re-entrant flows cause a high variability in factory performance measures. Also different customer demands, which are natural in the foundry business, should be taken into account (e.g. delivery dates or throughput). To reduce the variability and to improve the factory performance a robust and efficient dispatching and scheduling strategy is vital.


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Published: Apr 2012

The article at hand presents the results of thermoelectrical simulations of migration effects in integrated interconnect systems in comparison to measurement data. The simulation concept will be described and the output values as mass flux divergence and time-to-failure (TTF) will be discussed.


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Published: Dec 2017

The design concept of a state of the art 40V to 100V n-channel LDMOS is described in this paper. With aggressively thinner buried oxide (BOX) layer, for the first time, a SOI based power LDMOS has achieved comparable energy capability as Bulk BCD technology.


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Published: Apr 2012

The huge demand for high voltage, high current power devices on Silicon on Chip (SoC) has led to the development of Lateral IGBT (LIGBT), touted as the best candidate to serve these two purposes. This paper is the first to review the research works on LIGBTs published till now. The LIGBTs are categorized into four types based on different technologies applied, mainly Junction Isolation (JI), Silicon On Insulator (SOI), Partial SOI (PSOI) and Membrane, and ten varieties based on their device mechanisms, such as Reverse Conducting, Trench Gate and Super Junction.


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