Main process features:

• SOI substrate
• Deep Reactive Ion Etching (DRIE)
• Isotropic Silicon Etching
• HF Vapour Etching
• Wafer level packaging using glass frit bond

For more information, please download info sheet here.

Main process features:

• Triple axis inertial sensor using cavity SOI wafer based technology
• Sensor elements formed by silicon DRIE process
• Optional top and bottom metal layers
• Top cap wafer: Silicon with etched cavities and bond pad openings
• Cost effective wafer level packaging by wafer bonding

For more information, please download info sheet here.