259 entries
Published: Oct 2018

Even though image sensors have become smaller and smaller in the past years for usage in mobile phone and digital cameras, there are still applications which require large image sensors. For example, X-Ray sensors are used in a wide range of medical, industrial and scientific applications. Such large pixel designs come with their specific design challenges especially if they have to been read out fast.
In this webinar X-FAB will showcase its 0.18 µm CMOS process (XS018) that is particularly well-suited for image sensors. The presentation will focus on large pixel designs. Several pixel layouts with different photodiode shapes have been tested and characterized. You will learn about the pros and cons with regards to speed, full well capacity and image lag for the these layout structures. Register now to find out how your pixel design can be optimized!


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Published: Jul 2018

Tired of digging through endless process reliability specification documents? If you are looking for an easier way to calculate the lifetime of your ICs, this webinar is just right for you.
We will introduce and demonstrate a new web application – the RelXplorer - which allows you to calculate lifetimes based on mission profiles. It covers all aspects from lifetime parameters and lifetime plots for MOS transistors, capacitors, dielectrics and interconnects.
During this webinar you will learn about the functions and usage of the RelXplorer tool including a live demo session. Join the webinar and find out how the RelXplorer can help you in achieving high reliability with your next IC design.


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Published: Dec 2017

Spectral sensors have been attracting increasing interest for years. Solutions available today are limited in terms of space requirements, costs and/or robustness (automotive qualification) in a way that many application scenarios cannot be addressed well.


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Published: Dec 2017

In this webinar, you will learn about:
- The current state of the art in MEMS product design, including compact modeling, CMOS integration, MEMS PDKs and other innovative MEMS design flow techniques.  
- New techniques to accelerate the MEMS design process and reduce silicon learning cycles at the foundry, through re-use of established process steps, stacks and technology platforms.


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Published: Dec 2017

The design concept of a state of the art 40V to 100V n-channel LDMOS is described in this paper. With aggressively thinner buried oxide (BOX) layer, for the first time, a SOI based power LDMOS has achieved comparable energy capability as Bulk BCD technology.


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Published: Nov 2017

Approaches for wafer level 3D integration of CMOS and MEMS sensors are described in this paper.


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Published: Nov 2017

I. What is Micro-Tranfer-Printing?
II. MICROPRINCE - Pilot Line for Micro-Transfer-Printing
III. Optimization of Tether Design and Release Etch


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Published: Nov 2017

I. Introduction
II. NVM Technology & Design
III. NVM Product Integration & Application


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Published: Nov 2017

The shift of the threshold voltage (Uth) in high voltage metal-oxide-semiconductor field effect transistors (n-MOSFET) with source and drain regions created by an As-implantation with different implanters was investigated. By analyzing the capacitance-voltage curves recorded in metal-oxide-semiconductor structures with different thicknesses of SiO2 and different shapes we found that the shift of Uth in the n-MOSFETs was correlated with the presence of implantation induced defects in the gate oxide. These defects were stable even after the heat treatments at about 1200 K and they appeared in SiO2 due to different pressures in the implantation chamber and different types of gas.


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Published: Nov 2017

Tomorrows integrated power electronic systems require more efficient power conversion solutions at lower costs.


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