230 entries
Published: Jul 2017

Crystallized-shaped defect was detected after MIM (Metal-Insulator-Metal) Etch post clean step & the defect was found at the edge of MIM structure. The Energy-dispersive X-ray spectroscopy (EDX) analysis showed that the defect is fluorine contaminant after MIM Etch post cleaning step due to long delayed (>5hours).


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Published: Jun 2017

X-FAB platforms provide a complete choice of design libraries, design tools and primitive devices supporting ULP/ULL solutions both at elementary and at sub-system level, for best-in-class power management.


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Published: Jun 2017

A standardised approach to characterising low-frequency noise for semiconductor devices is presented in this paper. The purpose of this measurement technique is to easily compare performances of different devices from different technologies in order to develop high-precision low-noise technology.


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Published: Jun 2017

Advanced applications with higher environmental temperature and higher operating currents, as required in automotive applications for power transistor arrays, are exposed to higher mechanical stress. An optimized layout concept is used to minimize the effective mass flux in the metal interconnections.


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Published: Jun 2017

Since MEMS systems get more and more complex their design needs accurate consideration of the worst-case conditions. This paper introduces a realistic worst-case characterization from IC design to the MEMS manufacturing process.


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Published: Jun 2017

Ultrasound solutions are widely used in industrial and medical applications for distance measurements and imaging. A multiplexing switch unit is required to drive a piezoelectric transducer array for imaging by a single ultrasound pulse source. Higher frequencies are required for better image resolution.


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Published: May 2017

Motivation:
- self heating effect influences electrical characteristic of HV devices
- HCO performance strong temperature dependent


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Published: May 2017

The demand for miniaturized CMOS and MEMS sensors with high performance has increased significantly in the last years. In addition to MEMS / CMOS processing, advanced technologies are required for wafer level packaging and heterogeneous system integration for achieving the needed sensor performance as well as packaging requirements. Different technologies have been developed in microelectronic and also MEMS industry and are described in literature.


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Published: May 2017

The heterogeneous integration of silicon CMOS and GaN HEMTs by micro-Transfer-Printing combines a highly integrated CMOS logic with fast output drivers with very low on-state and switching losses.


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Published: May 2017

The integration of GaN HEMTs and silicon CMOS by micro-Transfer-Printing allows the combination of fast output drivers with very low on-state and switching losses and highly integrated CMOS logic.


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