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The ResourceXplorer enables you to access technical papers, webinars and articles related to analog/mixed-signal semiconductor technologies.
8 entries found
The 110 nm BCD-on-SOI technology platform (XT011) is the latest evolution of X-FAB's foundry offering, continuing the tradition of best-in-class offer for high-voltage automotive, industrial and medical applications.
The core platform leverages a competitive portfolio of digital libraries and non-volatile memory IP to be released throughout 2024, which, coupled with X-FAB’s high standards of design support, will enable first-time right success for your next-generation products.
In this webinar, X-FAB will present a first overview of the technology, available design solutions, support and release schedule, providing an initial introduction to the enhanced capabilities and benefits of this offer for their product roadmap.
Presenters:
Nando Basile, Technical Marketing Manager e-NVM
Lars Bergmann, Director Design Support
Zhenkun Chen, Program Leader XT011
While BCD-on-SOI was traditionally considered a niche technology, it has seen a steep rise in adoption in recent years from all major market segments. The higher SOI substrate cost is more than compensated by the many benefits that come with BCD-on-SOI technologies. X-FAB developed its first BCD-on-SOI technology more than 25 years ago and now offers the most extensive foundry BCD-on-SOI technology portfolio.
Our modular processes combine the benefits of dielectric isolation through buried oxide (BOX) and deep trench isolation (DTI) with a wide range of robust HV CMOS, bipolar and well-matched passive primitive devices. XT018 is our leading 180 nm BCD-on-SOI technology solution supporting automotive AEC-Q100 Grade 0 designs and also satisfying the more stringent automotive reliability requirements which become challenging to deal with in Bulk BCD processes.
Learn more about the benefits of dielectric isolation in BCD-on-SOI technologies like latch-up immunity, voltage scalable isolation and ESD-protection, ease of design for circuits with multiple voltage domains and simpler ways to handle AC-coupling effects.
Presenter:
Tilman Metzger, Technical Marketing Manager High Voltage
Dr. Alexander Hoelke, Senior Member Process Development
Guido Janssen, Principal Engineer Design Support
Modern medical applications rely on semiconductor technologies to build reliable, accurate and innovative devices. If you want to find out what types of technologies X-FAB provides and for which type of devices they can be used, then watch this webinar session covering the following topics:
- Feature-rich CMOS technologies for personal medical devices
- BCD-on-SOI technology for medical ultrasound probes Optical sensors for medical imaging applications
- Silicon-based microfluidics for next-generation DNA sequencing, liquid biopsy or micro electrode arrays
- Single-Photon Avalanche Diodes (SPAD) for life-science applications
Presenter:
Christine Dufour, Program Manager Microfluidics
Alexander Zimmer, Principal Engineer Process Development
Dr. Ulrich Bretthauer, Marketing Manager Medical
Abstract -- HV integrated lateral IGBTs are investigated as an attractive alternative to MOSFETs in integrated high-voltage (up to 230 V), low-power (5 - 500 mW) converters. A performance comparison of SJ-LIGBTs and SJ-MOSFETs is applied to define the design constraints and, consequently, to implement an optimized one-step power conversion topology with both device types. Measurement results of the topology with SJ-LIGBT show an up to 4.2 % higher efficiency in comparison to the SJ-MOSFET converter at 20.4 % smaller power-switch size.
The optimization of a metal-Schottky source-drain NMOS structure and it’s underlying parasitic lateral BJT has been performed on a 0.18 um feature size BCD power IC process. The metal-Schottky structure is fabricated using an ultra-shallow ion implantation which is capable of modifying the barrier height without the need for introduction of non-standard metal systems into the CMOS fab.