Abstract— The hafnium oxide based FeFET has attracted much attention due to its good scalability, high operating speed, and low power consumption. However, the integration of this device into CMOS technologies faces several challenges. Recently, the 1T1C FeFET concept with one transistor (1T) and a separate ferroelectric capacitor (1C) in the BEoL has been introduced. This new approach can be integrated into standard process technologies without significant changes at the transistor level. Herein, various stacks and integration schemes are investigated to optimize the BEoL MFM module. The impact of these stacks on key performance parameters of the BEoL MFM module, the 1T1C single-bit memory cell, and an 8 kbit test array is discussed.

Abstract—Timing jitter is one of the most important characteristics of single-photon avalanche diodes (SPADs), especially in applications requiring accurate photon timing, such as timecorrelated single photon counting (TCSPC) or LiDAR. In this article, we describe a measurement setup for the characterization of the timing jitter of actively-quenched SPADs using the TCSPC technique with a picosecond laser. By also describing the typical mistakes and potential pitfalls with such a setup, we aim to give a useful guideline on reproducing a setup with well-defined measurement uncertainty, in order to achieve comparable results
between devices of different manufacturers, both academic and commercial. In addition, we describe the physical cause of the jitter in SPADs to aid designers in the design of a new generation of low-jitter SPAD devices.

The optimization of a metal-Schottky source-drain NMOS structure and it’s underlying parasitic lateral BJT has been performed on a 0.18 um feature size BCD power IC process. The metal-Schottky structure is fabricated using an ultra-shallow ion implantation which is capable of modifying the barrier height without the need for introduction of non-standard metal systems into the CMOS fab.

Negative Bias Temperature Instability (NBTI) had become one of the most significant device reliability subject reported in this day and age. Not only does NBTI impose a big impact on circuit functionalities as well as product lifetimes, but also becoming the prominent limiting factor for further CMOS technology scaling. Hence accurate characterization and thorough understanding of NBTI is essential to follow or go beyond the Moore’s Law. Nonetheless the existence of NBTI recovery becomes a huge obstruction to this effort; whereby fast reduction in the degradation of the device parameter occurs after end of electrical stress. Moreover device characterization within the measurement stage further increases the NBTI recovery corresponding to the increase in delay.

A tunable optical prism MOEMS based on the deformation of a liquid droplet is presented. An aluminum-nitride membrane is tilted by a novel type of thermo-mechanical actuator. The actuatio nprinciple is based on a thermo-mechanical modulation of the intrinsic stress in aluminum-nitride beams. Based on an analytical model, the key parameters of the actuator are optimized.

Bond pad quality and reliability evaluation is part of important structure test for wafer fabrication. In order to ensure production consistency, and part of continuous monitoring, as well as new process qualification, bond pad evaluation through wire bond is required. Usually the test was conducted by proceed through standard IC packaging such as wafer saw, die attach and wire bond to simulate actual mass production environment. Optionally this can also be done by using wafer level wire bond. Main advantage of wafer level wire bond is shorter test cycle as compare to conventional package level bonding. This could be a significant time saving especially in the fast pace semiconductor field. Key concern of wafer level bonding is the correlation of bonding performance as compare to real application in the field.

Sensor interfacing is a crucial component for today’s systems in many application domains. Especially in automotive and manufacturing fields, high temperatures are encountered. For extracting the typically small sensor signals, an interface near the sensor is needed to provide a high-accuracy and robustness.