0.6 Micron Modular Trench Isolated SOI CMOS Technology

The XT06 Series complements X-FAB's 0.6 micrometer Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers, which allows unrestricted 60 V high and low side operation of all devices. The process offers reduced parasitics which results in smaller crosstalk, reduced noise and better EMC characteristics. XT06 thus allows innovative circuit design with reduced circuit complexity. CMOS as well as bipolar transistors are available with breakdown voltages of up to 110 V. The 5 V CMOS core is compatible in design rules and transistor performance with state-of-the-art 0.6 μm CMOS processes. For analog applications, several capacitor and resistor devices can be realized using the double poly architecture.

 
 

XT06 data sheet download

XT06 Data sheet

 
 

Available Modules

  • Trench SOI 0.6µm CMOS Core Module (1P2M)
  • ESD Implant Module
  • Mid-oxide Module
  • Medium Voltage PMOS Module
  • Extended Medium Voltage NMOS Module
  • Medium/high Voltage Depeltion NMOS Module
  • High Voltage Module
  • Extended High Voltage Module
  • Extended High Voltage PMOS Module
  • Double Poly Capacitor/(high resistor/low T.C.) Resistor Module
  • Linear Capacitor Module
  • Optical Window Module
  • 3 Metals Layer Module
  • Thick Third Metal Module
  • Polyimide Module