X-FAB's Failure Analysis Tool Set

As our customers have the best experience and knowledge of their own ASICs,  it is recommended to provide a proper prelocalisation. If this is not possible, X-FAB can provide the required support through external partners.

X-FAB's Failure Analysis relies on the know-how and skills of its highly qualified personnel, as well as on the analyzing power of its sophisticated equipment. Analysis methods include:

  • Electrical localization (*)
  • Cross sectioning
  • Grinding
  • Package opening
  • Layer removal
  • Backside polisher / Frontside polisher
  • Micro cleaving
  • Sputter coating
  • Spreading resistance (*)
  • Direct current capacitance-to-voltage (DC/CV) analysis
  • Bitmap scrambling
  • Voltage contrast
  • Optical microscopy
  • Focused Ion Beam (FIB)
  • Optical Beam Induced Resistivity Change (OBIRCH) (*)
  • Secondary Ion Mass Spectroscopy (SIMS), Auger Electron Spectroscopy (AES) (*)
  • Emission Microscopy (EMMI) (*)
  • Scanning Electron Microscopy (SEM) / Energy dispersive X-ray spectroscopy (EDX)
  • Transmission Electron Microscopy (TEM) / Energy dispersive X-ray spectroscopy (EDX) (*)
  • Energy dispersive X-ray spectroscopy (EDX) / X-ray Fluorenscence spectroscopy (IXRF) (*)
  • Electron beam (*)
  • Liquid Crystal Analysis (LCA) probe (*)

(*) Support provided through external contractors

More Options:

  • SEM / EDX
  • Cross section
  • Grinding
  • Package opening
  • Layer removal
  • Spreading resistance
  • Optical Microscope
  • FIB
  • OBRICH
  • SIMS, AES
  • EMMI
  • E-Beam
  • LCA - probe
  • TEM / EDX