152 entries
Published: July 2011

An enhancement-mode Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) device has been developed in 0.13μm technology platform. The single-transistor (1-T) SONOS device in NOR Flash memory array utilizes n-channel cells. The development of 1-T SONOS is not an easy feat due to many disturbs experienced by the cells during operation.


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Published: July 2011

Are you looking for a highly reliable embedded non-volatile memory (NVM) solution in an advanced technology node that is easy to integrate into your design? One that can serve as a platform for developing complete product families? This free webinar introduces X-FAB’s new XH018 eFlash option – the industry’s most cost-effective combination of high voltage and embedded flash for complex SoCs. Find out how it works and why eFlash is ideally suited for for high-speed microcontroller, digital power and automotive applications.


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Published: June 2011

In this paper, micromachined acceleration sensors as ready-to-use Intellectual-Property-Blocks (IP-Blocks) are introduced. These standard elements are available for a special surface micromachining foundry technology. They are ready to use, characterized and qualified design elements, which can be customized by changing the peripheral elements such as bond pads, and allow the fast prototyping and production start of high-performance inertial sensors.


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Published: June 2011

Photo detector integrated circuits (PDIC) require high-sensitivity and high-bandwidth photo diodes for the latest generation of Blu-ray data storage devices. Due to the very short 405nm wavelength used, carriers are generated close to the surface. Standard photo diodes have only a low sensitivity for blue light. Therefore, special adapted photo diodes are necessary to support sensitivity higher than 0.25A/W for a 405nm wavelength.


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Published: June 2011

XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing sensitive high bandwidth photo diodes arrays or CMOS image sensors for such applications as optical data storage, optical data communication or high dynamic range cameras.


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Published: May 2011

This paper demonstrates and explains the effects of hot carrier injection and interface charge trapping correlated with impact ionization under normal on-state conditions in a highly dense low-resistance Super-Junction LDMOSFET. The study is done through extensive experimental measurements and numerical simulations using advanced trap models.


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Published: May 2011

Successful integration of 100V LDMOS devices in 0.35μm CMOS technology is presented in this paper. These integrated devices are enhanced N-type and P-type LDMOS which are compatible with thin (14nm) and thick (40nm) layers of gate oxide. A breakdown voltage of more than 100V with RDS (ON) =200/180mΩ.mm2 for N-type LDMOS and RDS (ON) =690/640mΩ.mm2 for P-type LDMOS with 14nm/40nm gate oxide thickness.


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Published: May 2011

In this paper we present a modular trench isolated high voltage SOI process with the possibility to integrate various types of high voltage transistors. The integration of these additional 650 V devices takes place in a modular approach which allows a high process flexibility to support different applications with a minimum number of additional or changed process steps.


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Published: April 2011

The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology.
XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation of all devices. The process offers reduced parasitics which results in smaller crosstalk, reduced noise and better EMC characteristics. Thus XT06 allows innovative circuit design with reduced circuit complexity. CMOS as well as Bipolar Transistors are available with breakdown voltages up to 110V.
The 5 V CMOS core is compatible in design rules and transistor performance with state of the art 0.6μm CMOS processes.
For analog applications several capacitor and resistor devices are realized, using the double-poly architecture.


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Published: April 2011

Silicon photodiode integrated with CMOS has been in extensive study for the past ten years due to its wide use in applications such as short-distance communication, VCD players, ambient light sensors and many other intelligent systems. In recent years, high speed blue-ray DVD is replacing conventional DVD due to its larger storage capacity and higher speed. In this work, the photodiode optimized for blue ray is fully integrated with standard 0.35um CMOS process and the bandwidth dependency upon thermal process and epitaxial material is investigated.


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