150 entries
Published: September 2012

Reliability tests assessment are used to evaluate the quality of different process schemes of MIM capacitors. Typically, VRAMP tests can be used to check for extrinsics; which are common and popular method used for evaluating yield issues and early life failures (in which the product failures in ppm level); while TDDB tests are used to determine the intrinsic quality of the capacitor dielectrics; thus the lifetime will be extrapolated accordingly from its dependency from accelerated tests at different higher stress conditions down to the corresponding use condition.


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Published: August 2012

The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to 175ºC. All modules are comparable in Design Rules and Transistor Performance with our corporate state of the art 0.35 μm CMOS Processes. Comprehensive design rules, precise SPICE models, analog and digital libraries, IP’s and development kits support the process on platforms supplied by the major EDA tool vendors.


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Published: June 2012

Sensors are everywhere, serving as an interface between our analog world and the digital world of data processing in electronic systems. Is your design challenge – making sensor output signals available to complex digital systems – further complicated by the need for low noise, temperature-dependent behavior and non-linear effects? If you are looking for solutions for low noise amplification and temperature drift, non-linearity or signal offset compensation, don’t miss this free webinar. It helps designers select the right technology for low-noise and high-precision sensor interfaces. You’ll get tips for achieving excellent matching for robust circuits, and see how X-FAB’s sophisticated modelling enables first-time-right analog and mixed-signal designs.


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Published: June 2012

This paper demonstrates and discusses novel “three dimensional” silicon based junction isolation/termination solutions suitable for high density ultra-low-resistance Lateral Super-Junction structures.


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Published: June 2012

The XU035 series is X-FAB’s 0.35-micrometer Modular 700V Ultra-High-Voltage (UHV) Technology. Based upon the standard 1P3M process with single 5V gate oxide, 0.35-micron drawn gate length and metal design rules, the platform is engineered for applications needing an integrated power and startup device solution.


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Published: May 2012

Overwhelmed by the complexity of 700V designs due to cross talk, ESD, reliability or latch-up issues? Are your design challenges compounded by chip size and time-to-market issues? This webinar showcases X-FAB's new CMOS-based process for ultra-high-voltage apps such as AC LED lighting, ultra-low standby/no-load power and other power conversion and control applications. The combination of this cost-competitive process architecture and X-FAB’s design support enables first-time-right/first time functional designs for high-voltage lighting and power supply applications


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Published: May 2012

XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for applications using 110V net supply. The typical breakdown voltage of the HV-DMOS devices is >350 V or >275V. The modular process combines DMOS, bipolar and CMOS processing steps that are compatible with dielectric insulation to provide a wide variety of MOS and bipolar devices with different voltage levels within a dielectric bi-directional high voltage trench insulation on the same die.


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Published: April 2012

The huge demand for high voltage, high current power devices on Silicon on Chip (SoC) has led to the development of Lateral IGBT (LIGBT), touted as the best candidate to serve these two purposes. This paper is the first to review the research works on LIGBTs published till now. The LIGBTs are categorized into four types based on different technologies applied, mainly Junction Isolation (JI), Silicon On Insulator (SOI), Partial SOI (PSOI) and Membrane, and ten varieties based on their device mechanisms, such as Reverse Conducting, Trench Gate and Super Junction.


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Published: April 2012

The article at hand presents the results of thermoelectrical simulations of migration effects in integrated interconnect systems in comparison to measurement data. The simulation concept will be described and the output values as mass flux divergence and time-to-failure (TTF) will be discussed.


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Published: April 2012

In a typical ASIC semiconductor facility, there are hundreds of products processed on dozens of different equipments with unequal characteristics. Sequence depended equipment setups, failures, preventive maintenance and product specific re-entrant flows cause a high variability in factory performance measures. Also different customer demands, which are natural in the foundry business, should be taken into account (e.g. delivery dates or throughput). To reduce the variability and to improve the factory performance a robust and efficient dispatching and scheduling strategy is vital.


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