90 entries, filtered by: CMOS
Published: November 2012

Are you challenged with having to design a device that requires bidirectional isolation and has several voltage levels integrated on a single chip without latch-up? If that is the case, you should join our upcoming webinar introducing XT018, the world’s first trench-isolated SOI (silicon on insulator) foundry technology offering for 200V MOS capability at 180nm. The presentation covers the general benefits and trade-offs of using SOI technology vs. a silicon bulk process. It highlights features such as super-junction architecture for 100V to 200V devices with complete dielectric isolation, the possibility to apply defined handle wafer potentials, and a highly flexible modular approach for selecting specific technology features that meet your exact needs.


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Published: October 2012

This Inter-poly Oxide-Nitride-Oxide (ONO) dielectric film has been widely used as dielectric films in stacked gate Flash memory devices. The ONO dielectric film plays an important role in ensuring good reliability in flash memory devices. In this paper, the characteristics of ONO dielectric films have been analyzed.


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Published: October 2012

In this paper, optimization and physical scaling of the SONOS ONO triple layer are extensively evaluated, with detailed characterization of the Flash cell behavior. Reliability tests have demonstrated high temperature endurance and long-term data retention. The results have shown that the reliability requirement is attainable even with down scaling of the vertical component of the oxynitride charge trapping layer, which makes it feasible to operate the cell at a lower programming voltage.


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Published: October 2012

This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18µm PSOIHV process. The superjunction drift region helps in achieving uniform electric field distribution in both structres but also contributes to the on-state current in the LIGBT.


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Published: September 2012

Gate oxide early breakdown was investigated. It was verified that the gate oxide quality is good and failure was due to extrinsic causes. The failure, which was localized at the edge of LOCOS was similar to Kooi effect. However, investigations showed that it was due to nitridation occured during high temperature nitrogen anneal. Investigation methods to find the root cause of failure were explained. Alternative methods to solve the failure were explored; including thickening the sacrificial oxide layer and changing the nitrogen anneal process sequence. Final solution was chosen based on PCM stress test, QBD and TDDB result with minimal process change.


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Published: September 2012

Reliability tests assessment are used to evaluate the quality of different process schemes of MIM capacitors. Typically, VRAMP tests can be used to check for extrinsics; which are common and popular method used for evaluating yield issues and early life failures (in which the product failures in ppm level); while TDDB tests are used to determine the intrinsic quality of the capacitor dielectrics; thus the lifetime will be extrapolated accordingly from its dependency from accelerated tests at different higher stress conditions down to the corresponding use condition.


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Published: August 2012

The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to 175ºC. All modules are comparable in Design Rules and Transistor Performance with our corporate state of the art 0.35 μm CMOS Processes. Comprehensive design rules, precise SPICE models, analog and digital libraries, IP’s and development kits support the process on platforms supplied by the major EDA tool vendors.


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Published: June 2012

Sensors are everywhere, serving as an interface between our analog world and the digital world of data processing in electronic systems. Is your design challenge – making sensor output signals available to complex digital systems – further complicated by the need for low noise, temperature-dependent behavior and non-linear effects? If you are looking for solutions for low noise amplification and temperature drift, non-linearity or signal offset compensation, don’t miss this free webinar. It helps designers select the right technology for low-noise and high-precision sensor interfaces. You’ll get tips for achieving excellent matching for robust circuits, and see how X-FAB’s sophisticated modelling enables first-time-right analog and mixed-signal designs.


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Published: June 2012

This paper demonstrates and discusses novel “three dimensional” silicon based junction isolation/termination solutions suitable for high density ultra-low-resistance Lateral Super-Junction structures.


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Published: June 2012

The XU035 series is X-FAB’s 0.35-micrometer Modular 700V Ultra-High-Voltage (UHV) Technology. Based upon the standard 1P3M process with single 5V gate oxide, 0.35-micron drawn gate length and metal design rules, the platform is engineered for applications needing an integrated power and startup device solution.


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