16 entries, filtered by: Non-Volatile Memory
Published: March 2013

Everyone agrees that developing an IC is a challenging process with multiple trade-offs. You have to balance performance, size and cost requirements to decide how best to integrate customized memories. It’s fairly straightforward for ROM and RAM volatile memories because of well-established compiler solutions. But non-volatile memories (NVM) for trimming, data storage and programming require special consideration. X-FAB makes customizing complex embedded NVM solutions (such as EEPROM, OTP and NVSRAM) fast, easy and with minimal risks for errors. This webinar includes a live demo of an NVM compiler for NVRAM often used for data storage. You’ll see how easy and fast it is to customize your memory block design using the front-end design data (black box layout, a simulation model, a datasheet and a test specification) you receive from X-FAB within minutes via e-mail.


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Published: January 2013

The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length process, integrated with high voltage and Non-Volatile-Memory modules, the platform is specifically designed for a new generation of cost-effective "Super Smart Power" technology; operating in temperature range of -40 to 175 °C.


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Published: December 2012

The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron drawn gate length N-well process, integrated with highvoltage and Non-Volatile-Memory modules, the platform is ideal for SOC applications in the automotive market, as well as emdedded high-voltage applications in the communications, consumer and industrial market.
Comprehensive design rules, precise SPICE models, analog and digital libraries, IPs and development kits support the process for major EDA vendors.


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Published: October 2012

This Inter-poly Oxide-Nitride-Oxide (ONO) dielectric film has been widely used as dielectric films in stacked gate Flash memory devices. The ONO dielectric film plays an important role in ensuring good reliability in flash memory devices. In this paper, the characteristics of ONO dielectric films have been analyzed.


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Published: October 2012

In this paper, optimization and physical scaling of the SONOS ONO triple layer are extensively evaluated, with detailed characterization of the Flash cell behavior. Reliability tests have demonstrated high temperature endurance and long-term data retention. The results have shown that the reliability requirement is attainable even with down scaling of the vertical component of the oxynitride charge trapping layer, which makes it feasible to operate the cell at a lower programming voltage.


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Published: March 2012

X-FAB, a pure play foundry, has already extensive experience in volume production of monolithic integrated MEMS devices. The idea of combining CMOS and MEMS processes to obtain monolithic integrated sensor solutions is a logical, consequent step following the “More than Moore” strategy.


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Published: December 2011

In this webinar you will learn how X-FAB can support & manufacture your power system-on-chips (SoC) with its latest 0.18 micrometer technology (XP018). This foundry process for power management applications comes with a unique combination of high-voltage and high-density non-volatile memory (NVM) options with the lowest mask count in the industry. Find out why it is well-suited for cost optimized migration of existing solutions in larger geometries to 180 nanometers. You will also learn about the various memory options and its competitive RDSon for switching and power control in the 15V, 25V, 40V, 60V range.


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Published: July 2011

An enhancement-mode Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) device has been developed in 0.13μm technology platform. The single-transistor (1-T) SONOS device in NOR Flash memory array utilizes n-channel cells. The development of 1-T SONOS is not an easy feat due to many disturbs experienced by the cells during operation.


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Published: July 2011

Are you looking for a highly reliable embedded non-volatile memory (NVM) solution in an advanced technology node that is easy to integrate into your design? One that can serve as a platform for developing complete product families? This free webinar introduces X-FAB’s new XH018 eFlash option – the industry’s most cost-effective combination of high voltage and embedded flash for complex SoCs. Find out how it works and why eFlash is ideally suited for for high-speed microcontroller, digital power and automotive applications.


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Published: August 2009

One time programmable (OTP) electrically programmed read only memory (EPROM) become a simple low cost solution in non-volatile memory (NVM) to be integrated in variety of CMOS baseline technology node platforms without extra masks or additional process cost incur. The feasibility of EPROM floating gate built on buried channel pMOSFET was explored experimentally. The buried channel device physic fundamental characteristics would lead to consistently high erased cell current (Ioff) in μA level instead of expected pA level for EPROM cell in erased state. Alternative external voltage biasing could not be applied due to unavailability of floating gate terminal connection to control the buried channel onoff state.


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