116 entries
Published: November 2013

The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and full  custom designs for Industrial, Automotive and Telecommunication products. Based on a single poly, triple metal 0.35-micron drawn gate length process for digital applications, process modules are available such as embedded Non-Volatile Memory, high voltage options, as well as standard or thick fourth layer metal, double-poly and MIM capacitor and high resistance polysilicon.


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Published: July 2013

XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for applications using 220V net supply. The typical breakdown voltage of the HV DMOS devices is >350V or >650V. The modular process combines DMOS, bipolar and CMOS processing steps that are compatible with dielectric insulation to provide a wide variety of MOS and bipolar devices with different voltage levels within a dielectric bi-directional high voltage trench insulation on the same die.


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Published: June 2013

Lifetime determination is one of the reliability key tasks to have an accurate estimation of the period of time that can still survive with a certain confidence level under the specific operating conditions to perform the respective function of the applications. Various reliability tests have been designed to reveal and assess the respective wear-out degradation mechanisms.


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Published: May 2013

What happens when optical signals are converted to electrical signals? Focusing on the optical to electrical conversion process, this webinar sheds some light on the basics of light interaction from reflection, transmission, polarization and refraction to absorption with semiconductors devices. It explores electrical fields, recombination and lifetime, doping profiles, band structures and pn-junctions to determine what happens when light has been converted into electron-hole pairs. This webinar provides a solid overview of passive and active optical sensor elements manufactured in a mixed-signal CMOS process or added during post processing


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Published: May 2013

The filters are constituted by a Fabry-Perot resonator formed by two Bragg mirrors separated by a patterned cavity. The filter response can be tuned by changing the geometric parameters of the patterning, and consequently the cavity effective refractive index. In this way, many different filters can be produced at once on a single chip, allowing multichanneling. The filter has been designed, produced, and characterized. The results for a chip with 24 filters are presented.


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Published: May 2013

This paper demonstrates a novel lateral superjunction (SJ) lateral insulated gate bipolar transistor (LIGBT) fabricated in 0.18μm partial silicon on insulator (PSOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations.


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Published: May 2013

This paper presents versatile HV lateral JFET design method on 0.18μm SOI BCD technology to achieve variable Vth(pinch-off voltage) and Idsat, without DIBL effect over full operating Vds range and scalable breakdown voltage capability on both N-ch and P-ch JFET. The significant advantage of a HV JFET compared to depletion MOSFET is the lower area consumption in real circuit design which due to higher Idsat values at Vgs=0V.


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Published: May 2013

The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length N-well process, integrated with high voltage and Non-Volatile-Memory modules, the platform is engineered for applications needing an integrated solution and cost efficient process for high performance analog ICs. Targeted applications are switching applications, lighting, display, etc; operating in temperature range of -40 to 175 °C.


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Published: January 2013

The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length process, integrated with high voltage and Non-Volatile-Memory modules, the platform is specifically designed for a new generation of cost-effective "Super Smart Power" technology; operating in temperature range of -40 to 175 °C.


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Published: December 2012

We present a method for producing monolithically integrated CMOS optical filters with different and customerspecific responses. The filters are constituted by a Fabry-Perot resonator formed by two Bragg mirrors separated by a patterned cavity. The filter response can be tuned by changing the geometric parameters of the patterning, and consequently the cavity effective refractive index. In this way, many different filters can be produced at once on a single chip, allowing multichanneling. The filter has been designed, produced, and characterized. The results for a chip with 24 filters are presented.


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