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XC018 LP 5V abgpc04_5v is a robust low-voltage bandgap reference with N-well resistors. The cell features wide range of supply voltage and is stable even with large capacitive loads.

XH035: A_CELLS. For MOS module only. abgpc07 is a low-supply voltage bandgap reference with N-well resistors. The cell features low supply current and low noise.

XC10: A_CELLS; A_CELLS_M1. abiac01 is a general purpose VTH - based current reference. The circuit forces a current of 2.4μA (approx.) to flow through P- or N-MOS transistor with a W/L ratio of 10μm/6μm.

XB06: A_CELLS. abiac01 is a bias voltage source (VBP1, VBN1) which needs a bandgap cell for biasing.

XH035: A_CELLS. For MOS module only. abiac01 is a general purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 6µm/6µm and NMOS with W/L ration of 6µm/6µm.

XTabiac01 is a general purpose low-current bias cell. the circuit forces a current of 200nA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/12µm.

XC018 LP 3.3V abiac01_3v3 is a general purpose bias cell. The circuit forces a current of 200nA (approx.) to flow through PMOS with W/L ratio of 8µm/10µm and NMOS with W/L ratio of 4µm/20µm.

XC10: A_CELLS; A_CELLS_M1. abiac02 is a general purpose weak inversion bias cell. The circuit forces a current of 250nA (approx.) to flow through P- or N-MOS transistors with a W/L ratio of 10μm/10μm.

XB06: A_CELLS. abiac02 is a bias voltage source (VBP2, VBN2) which needs a bandgap cell for biasing.

XH035: A_CELLS. For MOS module only. abiac02 is a general purpose V_TH-based bias cell, a plain substitute for abiac01. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 6µm/6µm and NMOS with W/L ration

XT06 abiac02 is a general purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/10µm.

XC018 LP 3.3V abiac02_3v3 is a general purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 10µm/4µm and NMOS with W/L ratio od 6µm/12µm.

XB06: A_CELLS. abiac03 is a bias voltage source (VBP3, VBN3) which needs a bandgap cell for biasing.

XH035: A_CELLS. For MOS module only. abiac03 is a general purpose weak inversion bias cell. The circuit forces a current of 200nA (approx.) to flow through PMOS with W/L ratio of 6µm/12µm and NMOS with W?L ration of 6µm/20µm.

XT06 abiac03 is a general purpose biac cell. The circuit forces a current of10µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/6µm.

XC018 LP 3.3V abiac03_3v3 is a general purpose bias cell. The circuit forces a current of 10µA (approx.) to flow through PMOS with W/L ratio of 24µm/2µm and NMOS with W/L ratio od 14µm/6µm.

XH035: A_CELLS_HV. For MOS module only. abiac04 is a high voltage bias cell. The circuit forces a current of 2µA (approx.) to flow through PHV with W/L ratio of 8µm/12µm and NHV with W/L ratio of 8µm/14µm.

XT06 abiac05 is a general purpose VTH - based bias cell, a cheaper substitute for abiac02. The circuit forces a current of 2µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/10µm.

XT06 abiac06 is a general purpose V_TH - based bias cell, a cheaper substitute for abiac03. The circuit forces a current of 10µA (approx.) to flow through P- or N- MOS with W/L ration of 10µm/6µm.

XC018 LP 5V abiac06_5v is a general purpose bias cell. The circuit forces a current of 10µA (approx.) to flow through PMOS with W/L ratio of 24µm/3µm and NMOS with W/L ratio of 10µm/4µm.

XC06: A_CELLS_HV. abiac07 is a high-voltage bias cell. The circuit forces a current of 2µA (approx.) to flow through pghv PMOS with W/L ratio of 10µm/10µm and nmv NMOS with W/L ratio of 10µm/12µm.

XC018 LP 5V abiac07_5v is a general purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 10µm/6µm and NMOS with W/L ratio of 10µm/12µm.

XC06: A_CELLS_HV. abiac08 is a high-voltage bias cell. THe circuit forces a current of 2µA (approx.) to flow through pgmv PMOS with W/L ratio of 10µm/10µm and nhv NMOS with W/L ratio od 10µm/12µm. The cell features low-cost process option and is a co

XC10: A_CELLS; A_CELLS_M1. achpc01 is doubling charge pump 5V to 8.75V.

XC06: A_CELLS. achpc01 is a doubling charge pump 3.3V -> 5.7V. All capacitors are internal.

XT06 achpc01 is a doubling charge pump 3.3V => 5.6V.

XC10: A_CELLS; A_CELLS_M1. achpc02 is a 4-stage Dickson charge pump originally designed for EEPROM.

XC10: A_CELLS; A_CELLS_M1. acmpc01 is a general purpose voltage comparator with P-MOS input and hysteresis.

XB06: A_CELLS. acmpc01 is a low-power two-stage CMOS comparator with n-mos input stage and a CMOS-output stage.

XC06: A_CELLS. acmpc01 is a low-power CMOS comparator with N-MOS input stage.