0.6 Micron Modular Mixed Signal Technology with Embedded Non Volatile Memory and High Voltage Options

The XC06 Series complements X-FAB's 0.6 micrometer Modular Mixed Signal Technology with embedded non-volatile memory and high voltage options. EEPROM blocks up to 32 kbit and Flash memories up to 512 kbit can be integrated in standard cell, semi-custom and full custom designs for industrial, automotive and telecommunication products.

MOS and bipolar transistors are available with breakdown voltages of up to 100 V. The 5 V CMOS core is compatible in design rules and transistor performance with state-of-the-art 0.6 μm CMOS processes.

For analog applications, several capacitor and resistor devices can be realized using the double poly non-volatile memory architecture.

 
 

XC06 data sheet download

XC06 Data sheet

 
 

Available Modules

  • Standard 5V 0.6µm CMOS Core Module (1P2M)
  • ESD Implant Module
  • Medium Voltage NMOS Module
  • Medium Voltage PMOS Module
  • Extended Medium Voltage NMOS Module
  • Medium/high Voltage Depletion NMOS Module
  • High Voltage Graded PMOS Module
  • High Voltage Module
  • Extended High Voltage DMOS Module
  • Exended High Voltage PMOS Module
  • Triple Well Isolated CMOS Module
  • Triple Well Bulk Isolated CMOS Module
  • Double Poly Capacitor/(high resistor/low T.C.) Resistor Module
  • Linear Capacitor Module
  • Schottky Diode Module
  • ROM Module
  • EEPROM Module
  • FLASH Module
  • Optical Window Module
  • PIN Diode Module
  • 3 Metals Layer Module
  • Thick Metal Module
  • Polyimide Module