138 entries
Published: October 2012

This Inter-poly Oxide-Nitride-Oxide (ONO) dielectric film has been widely used as dielectric films in stacked gate Flash memory devices. The ONO dielectric film plays an important role in ensuring good reliability in flash memory devices. In this paper, the characteristics of ONO dielectric films have been analyzed.


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Published: October 2012

In this paper, optimization and physical scaling of the SONOS ONO triple layer are extensively evaluated, with detailed characterization of the Flash cell behavior. Reliability tests have demonstrated high temperature endurance and long-term data retention. The results have shown that the reliability requirement is attainable even with down scaling of the vertical component of the oxynitride charge trapping layer, which makes it feasible to operate the cell at a lower programming voltage.


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Published: October 2012

State of the art polymer strippers were identified and successfully evaluated as interesting alternatives as CMOS-compatible wet activations for semiconductor wafer direct bonding processes, including both high and low temperature annealing for bond interface strengthening. The polymer strippers achieve both excellent surface cleaning and wafer bonding activation by hydrophilization and are therefore a very interesting alternative as semiconductor direct wafer bonding pre-treatment.


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Published: October 2012

Hermetic sealing is important regarding functionality and reliability for MEMS components. Typically this sealing is done on the wafer level using wafer bonding which simultaneously also provides mechanical protective caps. However, inner pressure and hermeticity testing and monitoring a still a critical issue; therefore, in this paper a test structure adapted to a MEMS foundry process for inertial sensors is introduced.


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Published: October 2012

By this article an introduction of a highly robust metal track layout especially suitable for high current and temperature applications will be introduced. Starting with the reliability limitations normally observed for wide metal tracks, conclusions regarding the requirements for robust layout techniques will be drawn.


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Published: October 2012

This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18µm PSOIHV process. The superjunction drift region helps in achieving uniform electric field distribution in both structres but also contributes to the on-state current in the LIGBT.


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Published: September 2012

Ever been stuck with the “one product, one process” rule when what you really needed was access to a world-class quality process for multiple applications? Not anymore.
X-FAB is presenting a webinar on its open-platform MEMS inertial sensor processes including its new 3D inertial sensor technology. Learn how you can use X-FAB’s design partner, MicroMountains Applications, or apply your own design to X-FAB’s ready-to-use processes to run high or low wafer volumes without long and costly process development. Find out how X-FAB can help you get to market faster and secure high-quality manufacturing for inertial sensors. You’ll get an overview of both inertial sensor technologies and IP blocks from X-FAB, as well as design and test support from MicroMountains Applications.


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Published: September 2012

Reliability tests assessment are used to evaluate the quality of different process schemes of MIM capacitors. Typically, VRAMP tests can be used to check for extrinsics; which are common and popular method used for evaluating yield issues and early life failures (in which the product failures in ppm level); while TDDB tests are used to determine the intrinsic quality of the capacitor dielectrics; thus the lifetime will be extrapolated accordingly from its dependency from accelerated tests at different higher stress conditions down to the corresponding use condition.


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Published: August 2012

The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to 175ºC. All modules are comparable in Design Rules and Transistor Performance with our corporate state of the art 0.35 μm CMOS Processes. Comprehensive design rules, precise SPICE models, analog and digital libraries, IP’s and development kits support the process on platforms supplied by the major EDA tool vendors.


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Published: June 2012

Sensors are everywhere, serving as an interface between our analog world and the digital world of data processing in electronic systems. Is your design challenge – making sensor output signals available to complex digital systems – further complicated by the need for low noise, temperature-dependent behavior and non-linear effects? If you are looking for solutions for low noise amplification and temperature drift, non-linearity or signal offset compensation, don’t miss this free webinar. It helps designers select the right technology for low-noise and high-precision sensor interfaces. You’ll get tips for achieving excellent matching for robust circuits, and see how X-FAB’s sophisticated modelling enables first-time-right analog and mixed-signal designs.


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