This paper presents versatile HV lateral JFET design method on 0.18μm SOI BCD technology to achieve variable Vth(pinch-off voltage) and Idsat, without DIBL effect over full operating Vds range and scalable breakdown voltage capability on both N-ch and P-ch JFET. The significant advantage of a HV JFET compared to depletion MOSFET is the lower area consumption in real circuit design which due to higher Idsat values at Vgs=0V.
The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length N-well process, integrated with high voltage and Non-Volatile-Memory modules, the platform is engineered for applications needing an integrated solution and cost efficient process for high performance analog ICs. Targeted applications are switching applications, lighting, display, etc; operating in temperature range of -40 to 175 °C.
In this paper a modified MEMS foundry process allowing the production of 3D inertial sensors, such as accelerometers, gyroscopes and combinations, is introduced. The new MEMS process is suitable for a wide range of applications that use 3D accelerometers or gyroscopes. One-axis and three-axis designs can be produced with the same process, and the fabrication of complex inertial measurement units, in particular, the assembly process, is simplified.
Everyone agrees that developing an IC is a challenging process with multiple trade-offs. You have to balance performance, size and cost requirements to decide how best to integrate customized memories. It’s fairly straightforward for ROM and RAM volatile memories because of well-established compiler solutions. But non-volatile memories (NVM) for trimming, data storage and programming require special consideration. X-FAB makes customizing complex embedded NVM solutions (such as EEPROM, OTP and NVSRAM) fast, easy and with minimal risks for errors. This webinar includes a live demo of an NVM compiler for NVRAM often used for data storage. You’ll see how easy and fast it is to customize your memory block design using the front-end design data (black box layout, a simulation model, a datasheet and a test specification) you receive from X-FAB within minutes via e-mail.
The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length process, integrated with high voltage and Non-Volatile-Memory modules, the platform is specifically designed for a new generation of cost-effective "Super Smart Power" technology; operating in temperature range of -40 to 175 °C.
We present a method for producing monolithically integrated CMOS optical filters with different and customerspecific responses. The filters are constituted by a Fabry-Perot resonator formed by two Bragg mirrors separated by a patterned cavity. The filter response can be tuned by changing the geometric parameters of the patterning, and consequently the cavity effective refractive index. In this way, many different filters can be produced at once on a single chip, allowing multichanneling. The filter has been designed, produced, and characterized. The results for a chip with 24 filters are presented.
This paper evaluates the technique used to improve the latching characteristics of the 200V n-type superjunction (SJ) LIGBT on partial SOI. The initial design latches at about 23V with forward voltage drop (VON) of 2V at 300A/cm2. The latest design shows increase of latch-up voltage close to 100V without significant expense of VON.
The fabrication of semiconductor devices, even in the area of customer oriented business, is one of the most complex production tasks in the world. A typical wafer production process consists of several hundred steps with numerous resources like equipments and operating staff. The optimal assignment of each resource at each time for a certain number of wafers is vital for a efficient production process. Several demands defined by the customers and facility management must be taken into consideration with the objective to find the best tradeoff between the different needs.
The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron drawn gate length N-well process, integrated with highvoltage and Non-Volatile-Memory modules, the platform is ideal for SOC applications in the automotive market, as well as emdedded high-voltage applications in the communications, consumer and industrial market.
Comprehensive design rules, precise SPICE models, analog and digital libraries, IPs and development kits support the process for major EDA vendors.
Are you challenged with having to design a device that requires bidirectional isolation and has several voltage levels integrated on a single chip without latch-up? If that is the case, you should join our upcoming webinar introducing XT018, the world’s first trench-isolated SOI (silicon on insulator) foundry technology offering for 200V MOS capability at 180nm. The presentation covers the general benefits and trade-offs of using SOI technology vs. a silicon bulk process. It highlights features such as super-junction architecture for 100V to 200V devices with complete dielectric isolation, the possibility to apply defined handle wafer potentials, and a highly flexible modular approach for selecting specific technology features that meet your exact needs.