36 entries, filtered by: High-Voltage
Published: December 2012

The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron drawn gate length N-well process, integrated with highvoltage and Non-Volatile-Memory modules, the platform is ideal for SOC applications in the automotive market, as well as emdedded high-voltage applications in the communications, consumer and industrial market.
Comprehensive design rules, precise SPICE models, analog and digital libraries, IPs and development kits support the process for major EDA vendors.


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Published: May 2013

The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length N-well process, integrated with high voltage and Non-Volatile-Memory modules, the platform is engineered for applications needing an integrated solution and cost efficient process for high performance analog ICs. Targeted applications are switching applications, lighting, display, etc; operating in temperature range of -40 to 175 °C.


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Published: August 2012

The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to 175ºC. All modules are comparable in Design Rules and Transistor Performance with our corporate state of the art 0.35 μm CMOS Processes. Comprehensive design rules, precise SPICE models, analog and digital libraries, IP’s and development kits support the process on platforms supplied by the major EDA tool vendors.


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Published: June 2012

The XU035 series is X-FAB’s 0.35-micrometer Modular 700V Ultra-High-Voltage (UHV) Technology. Based upon the standard 1P3M process with single 5V gate oxide, 0.35-micron drawn gate length and metal design rules, the platform is engineered for applications needing an integrated power and startup device solution.


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Published: July 2008

The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Automotive, Consumer, Industrial and Telecommunication products. The process enables mixed-signal systems on one chip by its nonvolatile memory and sensor integration capabilities.
Based on a state of the art very cost effective single poly single metal 1.0-micron minimum feature size N-well process for mixed-signal and high voltage applications, various process modules are available for high performance analog and high voltage circuits. Using the non-volatile memory modules integration of EEPROM, OTP or NV latches is possible.
Technology variants for integrated MEMS are available.


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Published: August 2010

The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS (BCD) Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power management, RF circuits and high precision analog applications mixed with digital parts for Telecommunication, Consumer, Automotive and Industrial products. The digital part is fully compatible with X-CMOS 0.6 process family.


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Published: January 2013

The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length process, integrated with high voltage and Non-Volatile-Memory modules, the platform is specifically designed for a new generation of cost-effective "Super Smart Power" technology; operating in temperature range of -40 to 175 °C.


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Published: July 2013

XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for applications using 220V net supply. The typical breakdown voltage of the HV DMOS devices is >350V or >650V. The modular process combines DMOS, bipolar and CMOS processing steps that are compatible with dielectric insulation to provide a wide variety of MOS and bipolar devices with different voltage levels within a dielectric bi-directional high voltage trench insulation on the same die.


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Published: May 2012

XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for applications using 110V net supply. The typical breakdown voltage of the HV-DMOS devices is >350 V or >275V. The modular process combines DMOS, bipolar and CMOS processing steps that are compatible with dielectric insulation to provide a wide variety of MOS and bipolar devices with different voltage levels within a dielectric bi-directional high voltage trench insulation on the same die.


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Published: May 2013

This paper demonstrates a novel lateral superjunction (SJ) lateral insulated gate bipolar transistor (LIGBT) fabricated in 0.18μm partial silicon on insulator (PSOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations.


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