23 entries, filtered by: SOI
Published: May 2005

This work describes the electrical performance of a high voltage deep trench isolation on SOI wafers. Several process and design related effects on the electrical isolation capability are investigated. Several process parameters during the trench process are examined with regard to isolation capability as well as defect generation. Trench edge geometry and layout have also a very strong impact on the isolation capability.

Published: April 2002

The adjustment of emitter efficiency by variation of doping profiles or application of lifetime control techniques such as irradiation of electrons and helium are two generally recognized concepts for the improvement of power device characteristics. In this work both concepts were studied by use of device simulation for the development of an IGBT and freewheeling diode chipset for 3.3kV.

Published: February 2002

Result of a large-area, low-capacitance lateral p-i-n photodiode in silicon-on-insulator (SOI) are presented. This photodiode possesses an antireflection coating optimized for blue light and is therefore appropriate for scintillation detector applications. An average external quantum efficiency of 78.6% and 68.4% is achieved for λ = 430 nm and 400 nm, respectively.